The CoolSic 1200V SiC Trench MOSFET offers high efficiency, enabling higher frequency operation and increased power density. Its low switching losses and robust body diode ensure reliable performance in industrial energy, solar, and infrastructure applications. Qualified for industrial use, this MOSFET features a threshold-free on state, benchmark gate threshold voltage, and temperature-independent switching losses. Suitable for solar inverters, power supplies, UPS, and charging stations, it delivers reduced cooling effort, system complexity, and cost, making it an optimal choice for high-performance power management systems.
Maximum soldering temperature: 260°C for wave soldering
Mounting: Supports M3 screws with maximum torque of 3 Nm
Buy the Infineon Series CoolSic 1200V SiC Trench MOSFET: IMZ120R030M1H
Purchase your Infineon Series CoolSic 1200V Silicon Carbide MOSFET online today and enhance your power conversion projects. This high-performance device delivers low switching losses, excellent thermal stability, and robust operation ideal for industrial, solar, and infrastructure applications. With a recommended gate voltage of 15-18 V and a drain-source voltage of 1200 V, it ensures reliable switching and minimal system complexity. Fast delivery and secure online shopping make it the perfect choice to elevate your energy solutions with industry-leading efficiency and durability.
Order your Infineon Series CoolSic 1200V SiC Trench MOSFET today and give your power systems the dependable performance they need for high-efficiency energy conversion.
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