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INFINEON IMZ120R030M1HXKSA1 Silicon Carbide MOSFET

The CoolSic 1200V SiC Trench MOSFET offers high efficiency, enabling higher frequency operation and increased power density. Its low switching losses and robust body diode ensure reliable performance in industrial energy, solar, and infrastructure applications. Qualified for industrial use, this MOSFET features a threshold-free on state, benchmark gate threshold voltage, and temperature-independent switching losses. Suitable for solar inverters, power supplies, UPS, and charging stations, it delivers reduced cooling effort, system complexity, and cost, making it an optimal choice for high-performance power management systems.

Authorized Distributors
Source:Newark
Part No:IMZ120R030M1HXKSA1
Stock:493
Inv Date:05-29-2026
Price: Unit price: $20.02
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Source:DigiKey
Part No:IMZ120R030M1HXKSA1
Stock:495
Inv Date:05-29-2026
Price: Unit price: $19.78
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Part No:IMZ120R030M1HXKSA1
Stock:228
Inv Date:05-30-2026
Price: Unit price: $16.93
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Part No:IMZ120R030M1HXKSA1
Stock:240
Inv Date:05-29-2026
Price: Unit price: $8.97
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Source:Arrow EU
Part No:IMZ120R030M1HXKSA1
Stock:630
Inv Date:05-30-2026
Price: N/A
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Part No:IMZ120R030M1HXKSA1
Stock:210
Inv Date:05-30-2026
Price: N/A
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INFINEON IMZ120R030M1HXKSA1 Silicon Carbide MOSFET Specifications:

  • Drain-source voltage: 1200 V
  • Continuous drain current: 56 A at 25°C, 45 A at 100°C
  • Pulsed drain current: 150 A
  • Gate-source voltage: Max transient ±23 V, Recommended turn-on 15-18 V, turn-off 0 V
  • Power dissipation: 227 W at 25°C, 14 W at 100°C
  • Junction temperature: -55°C to 175°C
  • Storage temperature: -55°C to 150°C
  • Thermal resistance, junction-case: 0.51-0.66 K/W
  • Thermal resistance, junction-ambient: Up to 62 K/W
  • Gate charge: 63 nC
  • Switching energy: Turn-on 260 μJ, Turn-off 78 μJ (at 25°C)
  • Body diode forward voltage: 4.1-5.2 V
  • Maximum soldering temperature: 260°C for wave soldering
  • Mounting: Supports M3 screws with maximum torque of 3 Nm

Buy the Infineon Series CoolSic 1200V SiC Trench MOSFET: IMZ120R030M1H

Purchase your Infineon Series CoolSic 1200V Silicon Carbide MOSFET online today and enhance your power conversion projects. This high-performance device delivers low switching losses, excellent thermal stability, and robust operation ideal for industrial, solar, and infrastructure applications. With a recommended gate voltage of 15-18 V and a drain-source voltage of 1200 V, it ensures reliable switching and minimal system complexity. Fast delivery and secure online shopping make it the perfect choice to elevate your energy solutions with industry-leading efficiency and durability.

Order your Infineon Series CoolSic 1200V SiC Trench MOSFET today and give your power systems the dependable performance they need for high-efficiency energy conversion.

Frequently Asked Questions

Where can I buy INFINEON IMZ120R030M1HXKSA1?

You can click on the BUY or RFQ button to purchase IMZ120R030M1HXKSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IMZ120R030M1HXKSA1?

You can download the IMZ120R030M1HXKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMZ120R030M1HXKSA1?

INFINEON

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