The Infineon OptiMOS power transistor is a 60 V N-channel MOSFET optimized for high-performance switch mode power supplies and synchronous rectification. It features excellent thermal resistance, is 100% avalanche tested, and has a low gate charge of 56 nc for efficient switching. Compliant with RoHS and halogen-free standards, it offers a drain-source breakdown voltage of 60 V, continuous drain current of 59 A, and a pulsed drain current up to 336 A. Suitable for power management in industrial and electronic systems, it ensures reliable operation with low on-resistance and robust avalanche energy handling.
INFINEON IPA029N06NXKSA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 60 V
Continuous drain current: 59 A at 25°C
Pulsed drain current: 336 A
Gate threshold voltage: 2.8 V to 3.3 V
Gate source voltage: -20 V to 20 V
Gate charge: 56 nc
Power dissipation: 38 W
Thermal resistance, junction-case: 2.9 to 3.9 K/W
Avalanche energy, single pulse: 140 mJ
Operating and storage temperature: -55°C to 175°C
Gate resistance: 0.65 Ω to 1.95 Ω
Drain-source on resistance: 36 mΩ
RoHS compliant, halogen-free
Buy the Infineon IPA029N06N – Reliable Power MOSFET for Industrial Applications
Secure your power management needs by purchasing the Infineon IPA029N06N power MOSFET online today. Designed with a low on-resistance and high current capacity, this 60 V N-channel MOSFET ensures efficient performance and durability in industrial electronics and switch mode power supplies. Its avalanche and thermal robustness make it suitable for demanding applications, providing reliable operation over a wide temperature range. Order now to enhance your system’s efficiency and enjoy fast shipping and expert support.
Buy Infineon IPA029N06N now and experience unmatched reliability and performance in your power systems.
Frequently Asked Questions
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