INFINEON IPA95R1K2P7XKSA1 High-Voltage Power MOSFET
The 950V CoolMOS P7 series is a high-voltage super junction power MOSFET designed for demanding applications such as flyback topologies, LED lighting, low power chargers, and industrial power. It offers best-in-class FOM, reduced Qg, Ciss, and Coss, integrated ESD protection, and high reliability, enabling higher power density, lower BOM, and improved efficiency. Fully qualified for industrial use, it provides excellent switching performance, low gate charge, and thermal stability, making it suitable for PFC stages in consumer and solar applications.
INFINEON IPA95R1K2P7XKSA1 High-Voltage Power MOSFET Specifications:
Maximum drain-source voltage: 950 V
Continuous drain current: 3 A
Pulsed drain current: 16 A
Avalanche energy, single pulse: 1 mJ
Avalanche energy, repetitive: 0.14 mJ
Gate threshold voltage: 3 V
Gate-source leakage current: 1.2 A at 10 V
On-state resistance: 2.289 Ω at 10 V, 150°C
Gate charge total: 15 nc
Gate to source charge: 2 nc
Gate to drain charge: 5 nc
Input capacitance: 478 pF
Output capacitance: 7 pF
Diode forward voltage: 0.9 V at 2.7 A
Reverse recovery time: 560 ns
Reverse recovery charge: 3 pC
Total power dissipation: 27 W at Tj=25°C
Thermal resistance, junction-ambient: 62 °C/W
Operating junction temperature: -55°C to 150°C
Buy the Buy Infineon CoolMOS P7 Part Number IPA95R1K2P7XKSA1 Online
Purchase the high-quality Infineon CoolMOS P7 series power MOSFET online today. Designed for demanding industrial, consumer, and solar applications, it features 950V voltage rating, low gate charge, high reliability, and optimized switching performance. Whether you need it for PFC stages, LED lighting, or low-power chargers, this MOSFET ensures excellent efficiency, thermal stability, and durability. Safely upgrade your power designs with a trusted, fully qualified component available for quick delivery and competitive pricing.
Order your Infineon CoolMOS P7 Series IPA95R1K2P7XKSA1 today and enhance your high-voltage switching circuits with reliable, efficient power MOSFETs.
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