The OptiMOS™ 5 Power-Transistor is a highly efficient N-channel MOSFET designed for high-frequency switching and synchronous rectification applications. Featuring very low on-resistance and 100% avalanche tested, it ensures reliable operation and durability. The transistor supports a drain-source voltage of 100 V, continuous drain current of 47 A at 25°C, and pulse currents up to 264 A. Its low gate charge simplifies high-speed switching, making it ideal for modern power supply and motor control systems, with RoHS and halogen-free compliance for environmentally conscious designs.
INFINEON IPA050N10NM5SXKSA1 Power Transistor Specifications:
Drain-source voltage: 100 V
Continuous drain current: 47 A at 25°C
Pulsed drain current: 264 A
Gate-source voltage: ±20 V
Power dissipation: 38 W at 25°C
Thermal resistance, junction to case: 3.9°C/W
Gate threshold voltage: 2.2 to 3.8 V
Drain-source on resistance: 56 mΩ at Vgs=6 V
Avalanche energy: 110 mJ
Operating temperature: -55°C to 175°C
Package: PG-TO 220 FullPAK
RoHS compliant, halogen-free
Buy the Buy Infineon OptiMOS 5 Power-Transistor 100 V Part Number IPA050N10NM5SXKSA1 Online
Purchase the Infineon Power Transistor now online for your high-performance power management systems. Designed with low on-resistance and high current capacity, this 100 V MOSFET ensures efficient switching and reliable operation. Its superior thermal characteristics and avalanche tested feature make it suitable for demanding applications like motor control, power supplies, and industrial automation. Easy to integrate thanks to standard PG-TO 220 FullPAK package, this eco-friendly component complies with RoHS and halogen-free standards, making your projects compliant and ready for future challenges.
Get Infineon IPA050N10NM5SXKSA1 today—built for high-frequency switching, low Rds(on), and long-lasting durability.
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