The IPP030N10N3 G is a high-performance N-channel Power MOSFET from Infineon, featuring a maximum drain-source voltage of 100 V, low on-resistance of 2.6 mΩ at 10 V Vgs, and a continuous drain current of 100 A at 25°C. Its robust construction ensures excellent switching performance for high-frequency applications, including synchronous rectification. With a maximum operating temperature of 175°C and Pb-free RoHS compliance, this device is ideal for power switching in industrial, automotive, and consumer electronics, offering reliable durability and efficiency across a range of demanding environments.
INFINEON IPP030N10N3GXKSA1 Power MOSFET Specifications:
Drain-Source Voltage: 100 V
Continuous Drain Current: 100 A at 25°C
Pulsed Drain Current: 400 A at 25°C
Drain-Source On-Resistance: 2.6 mΩ at Vgs=10 V
Gate Threshold Voltage: 2 - 3.5 V
Maximum Operating Temperature: -55°C to 175°C
Thermal Resistance Junction-Case: 0.5 K/W
Power Dissipation: 300 W at 25°C
Gate-Source Voltage: ±20 V
Avalanche Energy: 1000 mJ
Package: PG-TO220-3 / PG-TO262-3
RoHS Compliant, Pb-free
Operating and Storage Temperature: -55°C to 175°C
Junction Temperature: -55°C to 175°C
Buy the Buy Infineon Power MOSFET Part Number IPP030N10N3 G Online
Purchase the Infineon Power MOSFET IPP030N10N3 G online today to ensure your electronic projects and power systems benefit from high efficiency, low on-resistance, and reliable performance. This component offers excellent thermal stability and is suitable for high-frequency switching and synchronous rectification in industrial, automotive, and consumer electronics. With a maximum drain-source voltage of 100 V, low Rds(on) of 2.6 milliohms, and rugged construction, it guarantees durability and optimal operation across a wide temperature range, making it an ideal choice for demanding applications.
Buy Infineon IPP030N10N3 G now and experience unmatched reliability and high-frequency switching performance for your power applications.
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