The OptiMOS 5 Power Transistor offers high efficiency for high frequency switching applications, featuring very low on-resistance and excellent gate charge characteristics. It is a 80 V N-channel MOSFET with 64 A continuous drain current, 38 W power dissipation, and is 100% avalanche tested. The device is RoHS compliant, halogen-free, and suitable for demanding power management tasks, providing reliable performance in compact, thermally optimized packages for advanced electronic and industrial systems.
INFINEON IPA052N08NM5SXKSA1 Power Transistor Specifications:
Voltage Rating: 80 V
Continuous Drain Current: 64 A
Pulsed Drain Current: 256 A
Power Dissipation: 38 W
Thermal Resistance Junction-Case: 4 K/W
Drain-Source Breakdown Voltage: 80 V
Gate Threshold Voltage: 2.2 - 3.8 V
On-Resistance: 59 mΩ at Ves=6 V, Io=16 A
Avalanche Energy: 84 mJ
Operating Temperature Range: -55°C to 175°C
Package: PG-TO 220 FullPAK
RoHS compliant, Halogen-free, Pb-Free Plating
Buy the Infineon Series OptiMOS™ 5 Power Transistor: 80 V N-Channel MOSFET
Enhance your electronic designs with the Infineon OptiMOS 5 Power Transistor, a high-performance 80 V N-channel MOSFET designed for low on-resistance, high current capacity, and efficient power management. Perfect for industrial, consumer, and automotive applications, this rugged device offers reliable operation with excellent thermal characteristics. Its small package and RoHS compliance make it an ideal choice for compact, environmentally friendly systems. Order now online and enjoy fast delivery, competitive pricing, and superior quality for your critical projects.
Buy Infineon OptiMOS 5 Power Transistor now and experience unmatched reliability and power efficiency for your high-frequency switching and industrial applications.
Frequently Asked Questions
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