The OptiMOS™ 3 Power-Transistor from Infineon is a 100 V N-channel MOSFET designed for high efficiency switching applications. It features very low on-resistance of 13.6 mΩ, high pulsed drain current of 156 A, and excellent gate charge characteristics for fast switching. The device is 100% avalanche tested, RoHS compliant, halogen-free, and suitable for demanding power management tasks. Its thermally optimized package ensures reliable operation in compact designs. Ideal for high-frequency switching, synchronous rectification, and power converters in industrial and consumer electronics.
INFINEON IPA126N10NM3SXKSA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 100 V
Maximum continuous drain current: 28 A (at Tc=25°C), 39 A (pulsed)
Gate threshold voltage: 2.7 to 3.5 V
Maximum Rds(on): 13.6 mΩ at Ves=6 V, Io=20 A
Pulsed drain current: 156 A
Avalanche energy: 90 mJ
Power dissipation: 33 W
Operating temperature range: -55°C to 175°C
Thermal resistance junction-case: 4.5 K/W
Gate charge (total): 35 nC
Input capacitance: 2500 pF
Output capacitance: 330 pF
Reverse recovery charge: 114 nC
Package: PG-TO 220 FullPAK
RoHS, halogen-free, JEDEC qualified
Buy the Buy Infineon OptiMOS 3 Power-Transistor Part Number IPA126N10NM3S Online
Experience the superior performance of the Infineon OptiMOS 3 Power-Transistor, a 100 V N-channel MOSFET optimized for high-frequency switching, power conversion, and synchronous rectification. Featuring very low Rds(on) of 13.6 mΩ, high pulsed drain current capacity of 156 A, and excellent gate charge characteristics, this device ensures fast, efficient switching in demanding industrial and consumer applications. Its robust package, compliant with RoHS and halogen-free standards, provides thermal stability and reliability across a wide temperature range from -55°C to 175°C. Perfectly suited for compact power supplies, motor drives, and automotive electronics, it guarantees efficiency, durability, and safety in your design.
Get Infineon OptiMOS 3 Power-Transistor IPA126N10NM3S today—built for high efficiency, low on-resistance, and reliable power switching.
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