The IPP65R190C7 is a high-voltage, 650V CoolMOS™ C7 Power Transistor designed on the superjunction technology platform. Its features include increased dv/dt ruggedness, low on-state resistance, and low gate charge, enabling higher efficiency and power density in switching applications. Suitable for PFC and PWM stages, it offers better reliability, easier drive characteristics, and reduced system cooling requirements, making it ideal for industrial, telecom, and renewable energy power systems. The device is qualified for industrial grade applications with Pb-free plating and halogen-free mold compound.
INFINEON IPP65R190C7FKSA1 Power Transistor Specifications:
Drain-source breakdown voltage: 650V
Continuous drain current: unspecified
Pulsed drain current: 49A
Avalanche energy, single pulse: 57mJ
Avalanche energy, repetitive: 0.29mJ
Gate threshold voltage: 3-4V
Gate resistance: 1.1Ω
Rds(on): 0.404Ω at Vgs=10V, Tj=150°C
Gate charge Qg: 23nC
Input capacitance Ciss: 1150pF
Output capacitance Coss: 17pF
Power dissipation: 72W
Thermal resistance junction to case: 1.73°C/W
Thermal resistance junction to ambient: 62°C/W
Operating junction temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
Soldering temperature: 260°C
Buy the Infineon IPP65R190C7 U+2013 Reliable Power Transistor for Industrial Applications
Order the Infineon IPP65R190C7 power transistor now to enhance your industrial and power conversion systems. Designed for high-voltage, high-efficiency switching, this device delivers lower gate charge, superior dv/dt ruggedness, and reliable operation. Its advanced superjunction technology ensures increased efficiency, reduced cooling requirements, and system savings. Suitable for PFC and PWM applications, it offers outstanding reliability and easy drive characteristics. Purchase online today for optimal performance in telecom, renewable energy, and industrial power supplies.
Get Infineon IPP65R190C7 today—built for high reliability, fast switching, and energy-efficient industrial power management.
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