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INFINEON IPA60R360P7XKSA1 High Voltage Power MOSFET

The IPA60R360P7 Power Transistor is a high-voltage MOSFET designed for efficient power switching applications. Featuring a 600V drain-source breakdown voltage, low Rds(on), and excellent ESD robustness over 2kV, it delivers low switching and conduction losses, making it ideal for PFC, LLC, and resonant switching stages. Its robust design ensures high reliability in industrial, server, telecom, and lighting applications. The device supports hard and soft switching, with a fully qualified JEDEC industrial qualification, ensuring safe, reliable operation in demanding environments.

Authorized Distributors
Source:Newark
Part No:IPA60R360P7XKSA1
Stock:23
Inv Date:05-29-2026
Price: Unit price: $2.18
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Source:DigiKey
Part No:IPA60R360P7XKSA1
Stock:400
Inv Date:05-29-2026
Price: Unit price: $2.61
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Part No:IPA60R360P7XKSA1
Stock:805
Inv Date:05-30-2026
Price: Unit price: $2.23
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Part No:IPA60R360P7XKSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $1.32
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Part No:IPA60R360P7XKSA1
Stock:492
Inv Date:05-30-2026
Price: N/A
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INFINEON IPA60R360P7XKSA1 High Voltage Power MOSFET Specifications:

  • Drain-source breakdown voltage: 600V
  • Continuous drain current: 2A
  • Pulsed drain current: 26A
  • Avalanche energy, single pulse: 27mJ
  • Avalanche energy, repetitive: 0.14mJ
  • Power dissipation: 22W at Tj=25°C
  • Thermal resistance, junction to case: 5.61°C/W
  • Thermal resistance, junction to ambient: 62°C/W
  • Gate threshold voltage: 3.5V typical
  • Rds(on): 0.702Ω at 10V Vgs and 150°C
  • Vds Max: 600V
  • Gate charge total: 13nC
  • Reverse diode forward voltage: 0.9V
  • Diode reverse recovery time: 145ns
  • Operating junction temperature: -55°C to +150°C
  • Storage temperature: -55°C to +150°C
  • Insulation withstand voltage: 2500V
  • Gate-source voltage (static): ±20V
  • Gate-source voltage (dynamic): ±30V

Buy the Infineon IPA60R360P7 – Reliable MOSFET for Industrial Applications

Get the Infineon IPA60R360P7 power MOSFET online now and upgrade your industrial, telecom, and lighting projects. This 600V high-efficiency device offers low Rds(on), excellent robustness, and low switching losses. Perfect for PFC, LLC, and resonant switching stages, it ensures reliable operation under demanding conditions. With certified JEDEC qualification for industrial use, it supports your design needs with safety, durability, and superior thermal management. Purchase today and improve your power management solutions with confidence.

Order your Infineon IPA60R360P7 power transistor today and enhance your industrial power switching systems with this robust, high-voltage MOSFET designed for efficiency and reliability.

Frequently Asked Questions

Where can I buy INFINEON IPA60R360P7XKSA1?

You can click on the BUY or RFQ button to purchase IPA60R360P7XKSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPA60R360P7XKSA1?

You can download the IPA60R360P7XKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPA60R360P7XKSA1?

INFINEON

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