The IPP60R105CFD7 is a 600V high-efficiency power MOSFET based on Infineon's CoolMOS™ CFD7 technology, designed for soft switching applications such as phase-shift full-bridge (ZVS) and LLC resonant topologies. It features ultra-fast body diodes, low gate charge, excellent ruggedness, and high reliability, making it suitable for server, telecom, and EV charging. With top-tier avalanche energy and thermal characteristics, this transistor ensures robust performance in high-voltage, high-density power solutions, enabling efficient, cooler, and lighter designs in advanced power conversion systems.
INFINEON IPP60R105CFD7XKSA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 600 V
Continuous drain current: 79 A
Pulsed drain current: 79 A
Avalanche energy, single pulse: 93 mJ
Avalanche energy, repetitive: 0.47 mJ
Maximum power dissipation: 106 W
Thermal resistance, junction-ambient: 62 °C/W
Junction temperature range: -55°C to 150°C
Gate threshold voltage: 3.5V to 4.5V
Drain-source on-resistance: 0.105 Ω
Gate charge total: 42 nC
Diode forward voltage: 1.0 V
Reverse recovery charge: 0.48 pC
Operating junction temperature: -55°C to 150°C
Insulation withstand voltage: 800 V
Buy the Buy Infineon Power MOSFET Part Number IPP60R105CFD7 Online
Purchase the Infineon Power MOSFET IPP60R105CFD7 online today to ensure your power conversion projects benefit from high efficiency, robust ruggedness, and superior thermal performance. Designed for resonant switching applications like LLC and phase-shift full-bridge topologies, this MOSFET features ultra-fast body diodes, low gate charge for reduced switching losses, and high-reliability avalanche capabilities. Its excellent thermal management and high strong avalanche energy ensure durability and stable operation in demanding environments. Get trusted quality from Infineon and optimize your high-power, high-density systems easily and effectively.
Order your Infineon Power MOSFET IPP60R105CFD7 today and enhance your high-voltage power switching efficiency with reliable, lightweight technology.
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