The IPDD60R125G7 is a 600V CoolMOS™ G7 power transistor designed for high-efficiency power switching in industrial applications. Featuring advanced C7 GOLD technology, it offers 15% better FOM Rosjon and Qg compared to previous models. The device integrates a low parasitic source inductance in an easy-to-use DDPAK package with Kelvin Source configuration, enabling high-current operation up to 54A pulse. Optimized for PFC and high-performance LLC circuits, it ensures faster switching, improved thermal performance, and high reliability suitable for server, telecom, UPS, and solar systems, making it ideal for demanding high-power environments.
INFINEON IPDD60R125G7XTMA1 Power Transistor Specifications:
Maximum drain-source voltage: 600V
Pulsed drain current: 54A
Continuous drain current: 27A at Tj<150°C
Avalanche energy (single pulse): 64mJ
Power dissipation: 120W at Tj=25°C
Thermal resistance junction-case: 1.04°C/W
Thermal resistance junction-ambient: 62°C/W
Gate threshold voltage: 3.5V (typ.), 4V (max)
Gate resistance: 0.8Ω
Output capacitance: 22pF
Gate charge total: 27nC
Body diode reverse recovery time: 280ns
Package: PG-HDSOP-10 with Kelvin Source, RoHS compliant, Pb-free
Reflow soldering temperature: 260°C
Buy the Infineon IPDD60R125G7 – Reliable Power Transistor for Industrial Applications
Enhance your high-power circuits with the Infineon IPDD60R125G7, a 600V power transistor designed for high efficiency and thermal performance. Suitable for PFC and LLC stages, it offers faster switching, low source inductance, and high current capacity up to 54A pulse. The easy-to-use DDPAK package ensures reliable soldering and better thermal management. Ideal for server, telecom, UPS, and solar applications, this transistor guarantees robustness and efficiency in demanding environments. Order online now for quick delivery and dependable performance.
Order your Infineon Series IPDD60R125G7 high-current power transistor today and enhance your power switching designs with proven efficiency and thermal reliability.
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