INFINEON IPL60R115CFD7AUMA1 High-Voltage Power MOSFET
The IPL60R115CFD7 is a high-voltage 600V Power MOSFET designed with Infineon’s CoolMOS™ CFD7 technology, optimized for soft switching topologies such as phase-shift full-bridge and LLC. It features an ultra-fast body diode, low gate charge, and best-in-class reverse recovery charge, ensuring high efficiency and reliability in resonant switching applications. Ideal for server, telecom, and electric vehicle charging systems, this device offers excellent ruggedness, high power density support, and is qualified for industrial use, making it a robust choice for demanding power conversion projects.
INFINEON IPL60R115CFD7AUMA1 High-Voltage Power MOSFET Specifications:
Drain-source breakdown voltage: 600 V
Continuous drain current: 47 A
Pulsed drain current: 79 A
Avalanche energy, single pulse: 93 mJ
Thermal resistance, junction-ambient: 62 °C/W
Gate threshold voltage: 3.5 V to 4.5 V
Gate charge: 42 nc
Drain-source on-state resistance: Max 115 mΩ
Reverse recovery charge: 0.48 to 0.96 pC
Dynamic dv/dt ruggedness: 70 V/ns
Operating junction temperature range: -40°C to 150°C
Package: PG-VSON-4
Buy the Infineon Series CFD7 Power MOSFET: IPL60R115CFD7
Enhance your power conversion projects with the Infineon IPL60R115CFD7, a 600V MOSFET featuring low gate charge and fast body diode. Optimized for resonant topologies like LLC and phase-shift full-bridge, it ensures high efficiency, robust ruggedness, and supports high power density solutions. Suitable for industrial, server, telecom, and electric vehicle charging applications, this device is designed for demanding environments, providing superior reliability and performance. Purchase online now to benefit from quick delivery and technical support for your advanced power systems.
Buy Infineon IPL60R115CFD7 now and experience unmatched reliability and high-efficiency performance for your power switching needs.
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