INFINEON IPL65R130C7AUMA1 High-Voltage Power Transistor
The CoolMOS™ C7 Power Transistor from Infineon is a high-voltage, fast-switching MOSFET designed using superjunction technology. Featuring a drain voltage of 650V, low gate charge, and enhanced ruggedness, it excels in applications like PFC and PWM stages. The ThinPAK SMD package ensures minimal parasitic inductance for rapid switching, higher efficiency, and system reliability. Suitable for industrial, solar, telecom, and UPS systems, it offers outstanding thermal performance and lower cooling requirements for increased power density.
INFINEON IPL65R130C7AUMA1 High-Voltage Power Transistor Specifications:
Drain Voltage: 650V
Drain Current: Continuous 75A, Pulsed 75A
Gate Threshold Voltage: 3.5V
Gate Resistance: 1Ω
Gate Charge: Total 35nC
Body Diode Recovery Time: 630ns
Avalanche Energy: 89mJ (single pulse)
Maximum Power Dissipation: 102W
Operating Junction Temperature: -40°C to 150°C
Thermal Resistance junction-case: 1.22°C/W
Thermal Resistance junction-ambient: 62°C/W
Reflow Soldering Temperature: 260°C
dv/dt Ruggedness: 100V/ns
Insulation Withstand Voltage: Viso unspecified
Package: ThinPAK SMD, PG-VSON-4
Buy the Infineon IPL65R130C7 – Reliable Power MOSFET for Industrial Applications
Enhance your power management systems with the Infineon IPL65R130C7 Power Transistor. Designed with advanced superjunction technology, it provides 650V blocking voltage, fast switching capabilities, low gate charge, and excellent thermal performance. The ThinPAK package ensures compactness and minimal parasitic inductance, making it ideal for industrial, solar, telecom, UPS, and other high-voltage applications. Its rugged design and high reliability enable system efficiency, reduced cooling costs, and increased power density, ensuring optimal performance in demanding environments.
Buy Infineon IPL65R130C7 now and experience unmatched reliability and power efficiency in high-voltage switching applications.
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