INFINEON IPAN60R650CEXKSA1 High Voltage Power MOSFET
The IPAN60R650CE is a high-voltage power MOSFET designed with Infineon's revolutionary CoolMOS™ CE superjunction technology. It operates at 600V, offering extremely low conduction and switching losses suitable for PFC and resonant switching stages in appliances like power supplies, LED lighting, and adapters. It features high ruggedness, ease of drive, Pb-free plating, and halogen-free mold compound, ensuring reliable performance under demanding conditions. Its low Rds(on), high avalanche energy, and excellent thermal characteristics make it ideal for cost-sensitive, high-efficiency applications in consumer electronics and lighting markets.
Switching times: Turn-on delay 10 ns, turn-off delay 58 ns, rise/fall time around 10-20 ns
Operating temperature: -40°C to 150°C
Gate threshold voltage range: 3.0–3.5 V
Buy the Buy Infineon CoolMOS CE Power Transistor Part Number IPAN60R650CE Online
Purchase the Infineon CoolMOS CE Power Transistor IPAN60R650CE online today to ensure high efficiency, low conduction and switching losses, and exceptional ruggedness. Designed with advanced superjunction technology, it provides reliable performance in power supplies, lighting, and adapters. Perfect for cost-sensitive applications requiring high voltage operation up to 600V, it features a low Rds(on), excellent thermal characteristics, and robust avalanche energy capabilities. Order now to enhance your electronic designs with a durable, energy-efficient, and easy-to-drive power MOSFET.
Get Infineon CoolMOS CE Power Transistor IPAN60R650CE today—built for high efficiency, low losses, and reliable operation in power supplies and lighting systems.
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