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INFINEON IMW120R045M1XKSA1 Silicon Carbide MOSFET

This high-performance Silicon Carbide MOSFET offers very low switching losses, a threshold-free on state characteristic, and a wide gate-source voltage range, ensuring efficient power management. Suitable for industrial power supplies, solar inverters, and energy generation applications, it features robust commutation and temperature-independent turn-off switching losses for increased durability. Qualified for industrial use, it provides Benchmark gate threshold voltage at 1200V, with a drain current of 52A, enabling higher frequency operation and system cost reduction. Designed for reliability and efficiency, it meets JEDEC standards, making it ideal for demanding industrial environments.

Authorized Distributors
Source:Newark
Part No:IMW120R045M1XKSA1
Stock:95
Inv Date:05-29-2026
Price: Unit price: $18.98
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Source:DigiKey
Part No:IMW120R045M1XKSA1
Stock:179
Inv Date:05-29-2026
Price: Unit price: $22.1
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Part No:IMW120R045M1XKSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $10.51
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Source:Arrow EU
Part No:IMW120R045M1XKSA1
Stock:214
Inv Date:05-30-2026
Price: N/A
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Part No:IMW120R045M1XKSA1
Stock:554
Inv Date:05-30-2026
Price: N/A
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INFINEON IMW120R045M1XKSA1 Silicon Carbide MOSFET Specifications:

  • Drain-source Voltage: 1200 V
  • Drain Current: 52 A at Tc=25°C
  • Pulsed Drain Current: 130 A
  • Gate-Source Voltage: -10 V to 20 V, Recommended 15 V turn-on, 0 V turn-off
  • Body Diode Forward Voltage: 4.1 V at 52 A, 25°C
  • On-Resistance: 45-59 mΩ (at 25°C to 175°C)
  • Thermal Resistance, Junction-Case: 0.51-0.66 K/W
  • Storage Temperature: -55°C to 150°C
  • Operating Junction Temperature: -55°C to 175°C
  • Power Dissipation: 228 W at Tc=25°C, 14 W at Tc=100°C
  • Soldering Temperature: 260°C for wave soldering
  • Package: PG-TO0247-3, Dimensions: length 20.80-21.10 mm, width 16.25-17.65 mm
  • RoHS Compliant and qualified for industrial applications per JEDEC tests

Buy the Buy Infineon CoolSic 1200V SiC Trench MOSFET Part Number IMW120R045M1XKSA1 Online

Order the Infineon CoolSic 1200V Silicon Carbide MOSFET today and experience superior efficiency, lower switching losses, and enhanced system reliability. Its robust design is ideal for industrial power supplies, solar inverters, and energy generation systems. With a maximum drain current of 52A and a low on-resistance, this MOSFET enables high-frequency operation and system cost reduction. Trusted for demanding industrial applications, it offers excellent thermal stability, high voltage handling, and compliance with industry standards, making it the optimal choice for your power management needs.

Get Infineon CoolSic 1200V SiC Trench MOSFET today—built for high efficiency and long-lasting durability in demanding industrial and energy generation applications.

Frequently Asked Questions

Where can I buy INFINEON IMW120R045M1XKSA1?

You can click on the BUY or RFQ button to purchase IMW120R045M1XKSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IMW120R045M1XKSA1?

You can download the IMW120R045M1XKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMW120R045M1XKSA1?

INFINEON

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