This high-performance Silicon Carbide MOSFET offers very low switching losses, a threshold-free on state characteristic, and a wide gate-source voltage range, ensuring efficient power management. Suitable for industrial power supplies, solar inverters, and energy generation applications, it features robust commutation and temperature-independent turn-off switching losses for increased durability. Qualified for industrial use, it provides Benchmark gate threshold voltage at 1200V, with a drain current of 52A, enabling higher frequency operation and system cost reduction. Designed for reliability and efficiency, it meets JEDEC standards, making it ideal for demanding industrial environments.
Gate-Source Voltage: -10 V to 20 V, Recommended 15 V turn-on, 0 V turn-off
Body Diode Forward Voltage: 4.1 V at 52 A, 25°C
On-Resistance: 45-59 mΩ (at 25°C to 175°C)
Thermal Resistance, Junction-Case: 0.51-0.66 K/W
Storage Temperature: -55°C to 150°C
Operating Junction Temperature: -55°C to 175°C
Power Dissipation: 228 W at Tc=25°C, 14 W at Tc=100°C
Soldering Temperature: 260°C for wave soldering
Package: PG-TO0247-3, Dimensions: length 20.80-21.10 mm, width 16.25-17.65 mm
RoHS Compliant and qualified for industrial applications per JEDEC tests
Buy the Buy Infineon CoolSic 1200V SiC Trench MOSFET Part Number IMW120R045M1XKSA1 Online
Order the Infineon CoolSic 1200V Silicon Carbide MOSFET today and experience superior efficiency, lower switching losses, and enhanced system reliability. Its robust design is ideal for industrial power supplies, solar inverters, and energy generation systems. With a maximum drain current of 52A and a low on-resistance, this MOSFET enables high-frequency operation and system cost reduction. Trusted for demanding industrial applications, it offers excellent thermal stability, high voltage handling, and compliance with industry standards, making it the optimal choice for your power management needs.
Get Infineon CoolSic 1200V SiC Trench MOSFET today—built for high efficiency and long-lasting durability in demanding industrial and energy generation applications.
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