The IR2113PBF is a high-voltage, high-speed power MOSFET and IGBT driver featuring independent high- and low-side output channels. Utilizing proprietary HVIC and latch-immune CMOS technology, it offers ruggedized monolithic construction. The device's logic inputs are compatible with standard CMOS or LSTTL signals down to 3.3V. It includes a high pulse current buffer stage to reduce driver cross-conduction and matched propagation delays for high-frequency applications. The floating channel can drive a high-side N-channel power MOSFET or IGBT operating at voltages up to 500V or 600V. Additional features include immunity to negative transient voltages (DV/DT), under-voltage lockout for both channels, CMOS Schmitt-triggered inputs with pull-down resistors, cycle-by-cycle edge-triggered shutdown logic, and outputs that are in phase with inputs. Suitable for various applications such as industrial automation, consumer electronics, renewable energy systems, and power management.
Enhance your power electronics with the IR2113PBF high-voltage, high-speed MOSFET and IGBT driver. This reliable device offers independent high- and low-side channel operation, compatible with CMOS logic signals down to 3.3V. Its rugged monolithic construction provides excellent immunity to negative transients and UV lockout, making it ideal for industrial automation, renewable energy systems, and motor drives. With matched propagation delays and in-phase outputs, it ensures precise control at high frequencies, boosting your system efficiency and durability. Buy online today for superior power management solutions.
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