This N-channel HEXFET power MOSFET features advanced process technology, logic level drive, fast switching, and full avalanche rating. Utilizing a planar cell, it provides a wide SOA for high-current applications up to 195A, making it reliable for industrial and power management uses. Suitable for wave soldering, it ensures durability and efficiency in demanding environments, with a common package designed for power dissipation up to 170W. It’s ideal for switch mode power supplies, motor drives, and high-current switching applications.
INFINEON IRL3705NPBF High-Current Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 55V
Rds(on): 0.019Ω at Vgs = 10V
Gate Threshold Voltage: 1V
Gate Charge: 9nC
Drain Current (Continuous): 890A at 26°C
Pulsed Drain Current: 310A
Power Dissipation: 170W
Operating Junction Temperature Range: -55°C to +175°C
Thermal Resistance Junction-to-Ambient: 62°C/W
Operating Temperature: -55°C to +175°C
Soldering Temperature (10s): 200°C
Package Type: TO-220AB
Repetitive Avalanche Energy: 7mJ
Gate-to-Source Voltage: ±18V
Source-Drain Capacitance: 3600 pF
Internal Drain Inductance: 48nH
Peak Diode Recovery dv/dt: 5.0 V/ns
Buy the International HEXFET IRL3705NPB – Reliable Power MOSFET for Industrial Applications
Purchase the International HEXFET IRL3705NPB online today to ensure your power management projects benefit from reliable, high-speed switching. Designed for industrial equipment like motor drives and switch mode power supplies, this N-channel MOSFET features advanced process technology, a wide SOA, and logic-level drive capability. Its fully avalanche rated performance makes it ideal for demanding applications requiring quick switching, high current handling up to 195A, and robust operation under continuous and pulsed conditions. Secure your stock now and improve your system efficiency with this proven component.
Order your International HEXFET IRL3705NPB power MOSFET today and enhance your high-current switching projects with dependable, fast, and efficient performance.
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