The IPP80N03S4L-03 is an OptiMOS®-T2 power transistor designed for high-performance switching applications. It features ultra-low Rds(on), high current capacity, and excellent avalanche energy characteristics, making it suitable for automotive and industrial use. Qualified to AEC Q101 standards and RoHS compliant, this enhancement-mode N-channel MOSFET operates up to 175°C with low gate charge and capacitance. It is ideal for efficient power management in high-current systems, with robust thermal and electrical performance supporting reliable long-term operation.
INFINEON IPP80N03S4L03AKSA1 Power MOSFET Specifications:
Maximum drain current: 80 A at Tc=25°C, 80 A at Tc=100°C
Pulsed drain current: 320 A
Drain-source breakdown voltage: 30 V
Gate threshold voltage: 1.0 V to 2.2 V
Power dissipation: 136 W at Tc=25°C
Thermal resistance junction-case: 1.1 K/W
Thermal resistance junction-ambient on PCB: 62 K/W
Avalanche energy: 260 mJ
Gate charge: 110 to 140 nC
Drain-source resistance: 23 to 27 mΩ
Operating temperature range: -55°C to +175°C
Front-side package: PG-TO262-3-1, PG-T0262-3-1
RoHS compliant and qualified to automotive standards (AEC Q101)
Buy the Infineon Series OptiMOS Power Transistor: IPP80N03S4L-03
Upgrade your electronic system with the high-quality Power MOSFET designed for efficiency and reliability. The IPP80N03S4L-03 offers ultra-low Rds(on), high current capacity, and automotive-grade durability. Its excellent thermal performance supports long-term operation in demanding environments. Perfect for automotive, industrial, and high-current switching applications, this device ensures optimal energy efficiency and device longevity. Purchase online today and enhance your projects with reliable power solutions that meet the highest standards of quality and performance.
Order your Infineon Series OptiMOS Power Transistor IPP80N03S4L-03 today and give your power management projects the dependable quality they deserve.
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