INFINEON AIGB40N65H5ATMA1 High Speed IGBT Power Module
The AIGB40N65H5ATMA1 is a high-speed IGBT featuring fifth-generation TRENCHSTOP™ 5 technology, designed for efficient switching in power electronics. It offers a 650V breakdown voltage, low gate charge, and is qualified according to AEC-Q101 standards. Suitable for off-board and on-board chargers, DC/DC converters, and power-factor correction applications, it provides a maximum junction temperature of 175°C, boasts RoHS compliance, and has a compact PG-TO263-3 package for reliable industrial performance.
Testing Conditions: Tc up to 175°C, Vce up to 650V
Repetitive Pulsed Collector Current: 120A
Operating Temp Range: -55°C to +150°C
Soldering Temperature (reflow): 260°C
Buy the Infineon Series Fifth Generation High Speed IGBT: AIGB40N65H5ATMA1
Purchase the high-speed IGBT power module designed with fifth-generation TRENCHSTOP™ technology. Featuring 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175°C, it ensures efficient switching for industrial power supplies, chargers, and converters. Its RoHS-compliant, compact PG-TO263-3 package offers excellent thermal performance with thermal resistance of 0.60 K/W junction to case and 85 K/W junction to ambient. Ideal for demanding applications requiring reliable high-speed switching, enhanced efficiency, and robust performance.
Order your Infineon Series Fifth Generation High Speed IGBT AIGB40N65H5ATMA1 today and give your power projects the dependable quality they deserve.
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