INFINEON IPT60R102G7XTMA1 High-Voltage Power Transistor
The IPT60R102G7 is a 600V CoolMOS™ G7 power transistor featuring an innovative TOLL package with Kelvin Source capability, designed for high-efficiency switching applications such as PFC, LLC, and high-performance switching power supplies. It delivers excellent Rds(on) characteristics, fast switching times, and improved thermal management, enabling higher current handling in a compact form. Suitable for industrial, computing, telecom, UPS, and solar inverters, it offers low parasitic inductance, high avalanche energy, and RoHS compliance for reliable, energy-efficient operation in demanding environments.
Package: PG-HSOF-8 with Kelvin Source configuration
Thermal resistance (junction to case): 0.888°C/W
Operating junction temperature: -55°C to +150°C
Gate threshold voltage: 3 to 4V
Gate charge (Qg): 34nC
Rise time: 5ns, Fall time: 4ns at Vos=400V
Body diode forward voltage: 0.8V
Reverse recovery charge: 3.1μC
RoHS compliant, lead-free, JEDEC qualified for industrial applications
Buy the Infineon Series G7 Power Transistor: IPT60R102G7
Purchase the Infineon Series G7 Power Transistor IPT60R102G7 now to enhance your industrial, telecom, and solar power systems. This high-voltage, low-loss MOSFET boasts fast switching, excellent thermal performance, and a compact TOLL package with Kelvin Source capability. Its robust avalanche energy and low Rds(on) enable reliable high-current operation in demanding environments, improving overall efficiency. With RoHS compliance and proven JEDEC quality, it ensures durability and energy savings. Buy online today for superior switching performance and trusted industrial-grade quality.
Order your Infineon Series G7 Power Transistor IPT60R102G7 today and give your high-efficiency switching projects the dependable quality they deserve.
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