The IPZ60R017C7 is a high-performance 600V power MOSFET featuring Infineon's CoolMOS C7 technology, designed for high efficiency applications such as PFC and LLC stages in power supplies. It offers excellent dv/dt ruggedness up to 120V/ns, low on-resistance of 0.033Ω, and high pulsed drain current of 495A, making it suitable for server, telecom, solar, and industrial drives. Its compact PG-TO 247-4 package, ease of use, and RoHS compliance make it ideal for demanding high-voltage switching applications with enhanced system efficiency.
INFINEON IPZ60R017C7XKSA1 Power MOSFET Specifications:
Maximum drain-source voltage: 600 V
Continuous drain current: Not specified (pulsed up to 495A)
Pulsed drain current: 495 A
Avalanche energy (single pulse): 582 mJ
Avalanche energy (repetitive): 2.91 mJ
dv/dt ruggedness: 120 V/ns
Gate threshold voltage: 3.5 V (typ.)
Gate-source leakage current: 100 nA
On-resistance Rds(on): 0.033 Ω (max.)
Power dissipation: 446 W
Junction-to-ambient thermal resistance: 62 °C/W
Operating junction temperature range: -55°C to 150°C
Package type: PG-TO 247-4
RoHS compliant and halogen-free mold compound
Gate charge Qg: 240 nC
Gate resistance: 0.45 Ω
Body diode reverse recovery charge: 18 μC
Maximum diode reverse recovery time: 630 ns
Buy the Infineon Series CoolMOS C7 Power Transistor: IPZ60R017C7
Enhance your power efficiency with the Infineon CoolMOS C7 series. The IPZ60R017C7 offers high dv/dt ruggedness, low Rds(on), and a compact PG-TO 247-4 package, ideal for server, telecom, and solar applications. Its robust design ensures reliable high-voltage switching with increased system efficiency and reduced switching losses, making it suitable for demanding industrial and high-performance power supply designs. Purchase online today for proven quality and performance.
Get Infineon CoolMOS C7 IPZ60R017C7 today—built for high-voltage switching, efficiency, and durability.
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