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INFINEON IPB60R280P7ATMA1 High-Voltage Power MOSFET

The 600V CoolMOS P7 Power Transistor is a high-efficiency, superjunction MOSFET designed for demanding power conversion applications. Featuring excellent switching performance, low conduction and switching losses, and high ESD robustness (>2kV), it is suitable for hard and soft switching environments such as PFC, LLC, and resonant stages. Its rugged design provides enhanced robustness against hard commutation, facilitating efficient, compact, and cooler operation in power supplies for lighting, servers, telecom, and industrial equipment. Qualified according to JEDEC standards, it ensures reliability for industrial applications.

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Source:Newark
Part No:IPB60R280P7ATMA1
Stock:253
Inv Date:05-29-2026
Price: Unit price: $2.49
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Source:DigiKey
Part No:IPB60R280P7ATMA1
Stock:6157
Inv Date:05-29-2026
Price: Unit price: $3.04
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Part No:IPB60R280P7ATMA1
Stock:6048
Inv Date:05-30-2026
Price: Unit price: $2.59
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Part No:IPB60R280P7ATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.82
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Source:Arrow EU
Part No:IPB60R280P7ATMA1
Stock:5000
Inv Date:05-30-2026
Price: N/A
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INFINEON IPB60R280P7ATMA1 High-Voltage Power MOSFET Specifications:

  • Vds Drain-source voltage: 600V
  • Continuous drain current: 36A
  • Pulsed drain current: 36A
  • Gate threshold voltage: 3-4V
  • On-resistance Rds(on): 280 mΩ
  • Avalanche energy single pulse: 38 mJ
  • Max. diode recover energy: 21 mJ
  • Device package: PG-TO 263-3
  • Thermal resistance junction to ambient: 62°C/W
  • Input capacitance: 761 pF
  • Output capacitance: 14 pF
  • Gate charge Qg: 18 nc
  • Body diode reverse recovery time: 158 ns
  • Operates at junction temperature: -55°C to 150°C
  • Storage temperature: -55°C to 150°C
  • Max. power dissipation: 53 W
  • Gate-source voltage (static): ±20V
  • Gate-source leakage current: 1 μA

Buy the Infineon IPB60R280P7 – Reliable MOSFET for Industrial Applications

Order the Infineon IPB60R280P7 high-voltage power MOSFET today to enhance your power conversion systems. With its low on-resistance, excellent switching robustness, and high ESD protection, this device is ideal for demanding applications such as PFC, server power supplies, industrial lighting, and telecom infrastructure. Its compact PG-TO 263-3 package simplifies thermal management and board design, ensuring reliable operation. Experience improved efficiency, reduced thermal stress, and improved reliability by purchasing this industry-grade power MOSFET online now.

Buy Infineon IPB60R280P7 power transistor now and experience unmatched efficiency, robustness, and ease of design for demanding power conversion tasks.

Frequently Asked Questions

Where can I buy INFINEON IPB60R280P7ATMA1?

You can click on the BUY or RFQ button to purchase IPB60R280P7ATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPB60R280P7ATMA1?

You can download the IPB60R280P7ATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPB60R280P7ATMA1?

INFINEON

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