The product is an advanced power semiconductor module featuring a Trench/Fieldstop IGBT4 with emitter-controlled diodes, PressFIT connections, and pre-applied thermal interface material. Designed for high-voltage switching applications, it offers low switching losses, low Vcesat, and robust mounting with integrated clamps. Ideal for auxiliary inverters, motor drives, and air conditioning systems, it combines compact design and thermal efficiency for reliable, efficient operation in demanding industrial environments.
INFINEON FP15R12W1T4PB11BPSA1 Power Module Specifications:
Collector-Emitter Voltage Vees: 1200 V
Collector DC Current: 15 A (100°C), 30 A (peak)
Repetitive Peak Collector Current: 30 A
Gate-Emitter Peak Voltage: +20 V
Gate Threshold Voltage: 0.48 V to 6.40 V
Gate Charge: 0.12 uc
Input Capacitance: 0.89 nF
Thermal Resistance, junction to heatsink: Valid with pre-applied thermal interface material
Isolation Test Voltage RMS: 25 kV
Module Stray Inductance: 30 nH
Storage Temperature Range: -40°C to 150°C
Maximum Baseplate Operation Temperature: 125°C
Weight: approximately 24 g
Buy the Infineon FP15R12W1T4P – Reliable Power Module for Industrial Applications
Acquire the Infineon FP15R12W1T4P Power Module online today to ensure reliable operation in your industrial applications. This advanced power module features a durable design with PressFIT technology, emitter-controlled IGBT4, and integrated diodes, making it ideal for high-voltage switching, motor drives, and HVAC systems. Its low switching losses and thermal efficiency improve system performance and energy savings. Suitable for demanding environments, this module’s compact, rugged construction guarantees long-term stability. Order now to upgrade your power electronics with proven quality and performance.
Order your Infineon FP15R12W1T4P module today and enhance your industrial inverter, motor drive, or HVAC system with high efficiency and robust performance.
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