The IRF7304TRPBF is a dual P-channel HEXFET Power MOSFET designed for high efficiency in various power management and industrial applications. It features advanced manufacturing for the lowest possible ON-resistance, fast switching speeds, and rugged construction. The device comes in a modified SO-8 package with enhanced thermal characteristics and dual-die capability, enabling compact and efficient power solutions. Its Generation V technology ensures ultra-low ON-resistance, dynamic dV/dt rating, and excellent performance in surface-mount configurations.
INFINEON IRF7304TRPBF Power MOSFET Specifications:
Maximum Drain-to-Source Voltage: -45V
Maximum Continuous Drain Current: 4.3A at 25°C, 3.4A at 70°C
Pulsed Drain Current: 47A
Power Dissipation: 2.0W
Gate-to-Source Voltage: ±12V
Junction and Storage Temperature Range: -55°C to +150°C
Thermal Resistance Junction-to-Ambient: 625 °C/W
Rise Time: 31 ns
Fall Time: 35 ns
Total Gate Charge: 110 nC
Package: SO-8 with enhanced thermal features
Lead-Free construction
Dynamic dV/dt Rating: high
Surface mount in Tape & Reel for mass production
High-speed switching with low ON-resistance and ruggedized design
Buy the International Series HEXFET P-Channel Power MOSFET: IRF7304TRPBF
Enhance your power management system with the high-performance IRF7304TRPBF dual P-channel HEXFET MOSFET. Featuring ultra-low ON-resistance, fast switching speeds, and ruggedized thermal design, this device ensures high efficiency and reliability in various industrial and industrial power applications. Its advanced Generation V technology, surface-mount SO-8 package, and dual-die capability make it ideal for space-constrained environments. Purchase online today for the ultimate in durability, speed, and energy efficiency, perfect for modern electronic systems.
Buy International HEXFET P-Channel Power MOSFET IRF7304TRPBF now and experience unmatched efficiency, fast switching, and compact thermal design for power applications.
Frequently Asked Questions
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