The IRFIZ24NPbF is a fifth-generation HEXFET Power MOSFET designed for high efficiency and reliability in industrial applications. It features advanced processing for extremely low on-resistance, fast switching, and robust ruggedized construction. Its isolated TO-220 Fullpak package offers high thermal and electrical isolation, making installation straightforward without additional hardware. Suitable for switching and high-voltage applications, this device supports a continuous drain current of 14A at 25°C, with a drain-source breakdown voltage of 55V. Its low gate charge and fast switching time optimize performance in power management systems.
INFINEON IRFIZ24NPBF Hexfet Power MOSFET Specifications:
Drain-source Breakdown Voltage: 55 V
Continuous Drain Current: 14 A at 25°C
Power Dissipation: 29 W
Thermal Resistance, Junction-to-Ambient: 65°C/W
Gate-to-Source Voltage: ±20 V
Gate Threshold Voltage: 2.0 to 4.0 V
Gate Charge: 5.3 nC to 20 nC
Output Capacitance: 12 pF
Reverse Transfer Capacitance: 6 pF
Source-Drain Ratings, Continuous Source Current: 14 A
Peak Diode Forward Voltage: 13 V
Maximum Case Temperature: 175°C
Soldering Temperature (10 sec): 300°C
Mounting Torque: 10 lb.in (1.1 Nm)
Buy the Buy International HEXFET Power MOSFET Part Number IRFIZ24NPbF Online
Discover the high-performance HEXFET Power MOSFET IRFIZ24NPbF available online. This rugged device features exceptionally low on-resistance, fast switching ability, and a high-voltage isolation package suitable for industrial switches and power supplies. With a drain-source breakdown of 55V and continuous drain current of 14A, it is ideal for demanding power management systems. Its built-in avalanche rating, thermal stability, and easy installation make it the perfect choice for engineers seeking reliable, efficient operation across a wide temperature range.
Get International HEXFET Power MOSFET IRFIZ24NPbF today—built for high efficiency, low resistance, and rugged industrial performance.
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