The IRF9383MTRPbF is a P-Channel Power MOSFET utilizing HEXFET® Silicon technology with DirectFET® packaging, offering the lowest on-resistance in a compact SO-8 footprint. Designed for high-efficiency power switching, it supports dual-sided cooling for improved thermal performance, reducing thermal resistance significantly. Suitable for high-side switching, input power isolation, and inverter applications, this RoHS-compliant device handles a drain-to-source voltage of -30V and continuous drain currents up to -22A at 25°C, making it ideal for demanding power management systems and applications requiring low RDS(on) and efficient thermal dissipation.
INFINEON IRF9383MTRPBF P-Channel Power MOSFET Specifications:
Drain-to-Source Voltage: -30V
Gate-to-Source Voltage: +20V
Continuous Drain Current at 25°C: -22A
Continuous Drain Current at 70°C: -17A
Pulsed Drain Current: -180A
Maximum Power Dissipation: 113W
Junction-to-Ambient Thermal Resistance: 12.5°C/W
Junction-to-Case Thermal Resistance: 14°C/W
RoHS Compliant, Lead-Free
Package Type: DirectFET® Medium Can SO-8 footprint
Operating Junction Temperature Range: -55°C to +150°C
Typical On-Resistance (RDS(on)) at 10V: 23mΩ
Gate Threshold Voltage: -1.3V to -2.4V
Gate Charge (Qg): 130nC
Reverse Recovery Charge: 315nC
Buy the International Series IRF9383 P-Channel Power MOSFET: IRF9383MTRPBF
Discover the high-performance IRF9383MTRPBF P-Channel Power MOSFET, designed for efficient power switching and management. With an optimized DirectFET® package, it delivers superior thermal dissipation and low RDS(on). Suitable for high-side switches, inverter use, and input power isolation, this RoHS-compliant device handles up to -30V drain-to-source voltage and -22A continuous drain current at room temperature. Its compact SO-8 form factor ensures easy integration into various power applications, providing reliable operation and reduced thermal resistance for enhanced system performance.
Order your International Series IRF9383MTRPBF P-Channel Power MOSFET today and give your power systems the dependable high-efficiency performance they deserve.
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