This high-performance HEXFET power MOSFET is designed for high-speed power switching applications, including SMPS and uninterruptible power supplies. It features a 75V drain-to-source voltage, low on-resistance of 2.8 to 3.3 mΩ, and a continuous drain current of up to 2000A at 25°C. The device offers excellent avalanche capability, ruggedness, and dynamic dV/dt handling, making it suitable for demanding power conversion and switching circuits. Its TO-247AC package ensures reliable mounting and thermal management for high-frequency, high-current applications.
On-Resistance: 2.8 to 3.3 mΩ (at Vos = 10V, Ip = 75A)
Junction Temperature Range: -65°C to +175°C
Storage Temperature Range: -65°C to +175°C
Soldering Temperature (10 sec): 300°C
Thermal Resistance Junction-to-Case: 0.44°C/W
Case-to-Sink: 0.24°C/W
Thermal Resistance Junction-to-Ambient: Max 40°C/W
Avalanche Energy: 200 mJ (Single Pulse)
Package: TO-247AC
Buy the International Series HEXFET Power MOSFET: IRFP3077PBF
Discover the reliability and efficiency of the International IRFP3077PbF power MOSFET, ideal for high-speed switching, power conversion, and inverter circuits. With a drain-to-source voltage of 75V, low on-resistance of 2.8 to 3.3 milliohms, and continuous drain current capacity of up to 2000A at 25°C, this device ensures exceptional performance under demanding conditions. Its rugged design includes advanced avalanche capabilities, excellent dynamic dV/dt handling, and robust thermal management in the TO-247AC package. Perfect for industrial power applications requiring high efficiency and durability.
Buy International IRFP3077PbF now and experience unmatched reliability and performance in high-current switching applications.
Frequently Asked Questions
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