The 700V CoolMOS P7 Power Transistor features superjunction technology that enables high efficiency, high power density, and very slim designs. Its low Rds(on) and low switching losses make it ideal for consumer applications like chargers, adapters, and lighting. The transistor offers excellent thermal performance, integrated ESD protection, and ruggedness, supporting high-frequency switching for optimized energy efficiency in compact, cost-effective power solutions. Suitable for flyback topologies, it ensures reliable operation and performance in demanding environments.
INFINEON IPN70R2K0P7SATMA1 Power Transistor Specifications:
Drain-source breakdown voltage: 700 V
Drain current: 20 A (at Tj=25°C)
Pulsed drain current: 5.7 A
Gate threshold voltage: 3.3 V to 3.5 V
Rds(on): Max 3.74 Ω at Vgs=10V, Tj=150°C
Gate charge: Total Qg 3.8 nC
Switching energy loss: Eoss 0.4 mJ at 400V
Turn-on delay time: 12 ns
Fall time: 70 ns
Built-in ESD protection diode, class 1C (HBM)
Operating temperature range: -40°C to 150°C
Power dissipation: Max 6 W at Tc=25°C
Package: PG-SOT223
Max junction-to-ambient thermal resistance: 160°C/W
Buy the Infineon IPN70R2K0P7S – Reliable Power Transistor for Industrial Applications
Experience the high-performance efficiency of the power transistor designed for demanding industrial applications. This 700V device offers excellent thermal behavior, low Rds(on), and reduced switching losses, making it perfect for high-frequency switching in consumer and industrial markets. Its rugged construction, integrated ESD protection, and compact PG-SOT223 package enable high power density and slim design integration. Ideal for flyback topologies in chargers, lighting, and adapters, it assures reliable operation and long-lasting durability for your power management solutions. Purchase online today for fast delivery and trusted quality.
Get Infineon IPN70R2K0P7S today—built for high efficiency, rugged reliability, and optimal performance in demanding power electronics.
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