The IRLML6346TRPBF is a HEXFET® single N-channel power MOSFET suitable for battery protection, DC switching, and load management in various electronic systems. It features a compact Micro3™ (SOT-23) package that ensures reliable, high-performance switching with low on-resistance and fast switching times. The device is RoHS compliant, halogen-free, and consumer qualified with an MSL-1 rating, making it ideal for environmentally friendly, high-reliability applications. Its specifications include a drain-source voltage of 30 V, continuous drain current up to 3.4 A at 25°C, maximum power dissipation of 13 W at 25°C, and a gate threshold voltage of 0.5 V to 0.8 V, designed for optimal power efficiency and seamless load switching.
INFINEON IRLML6346TRPBF Power MOSFET Specifications:
Drain-Source Voltage: 30 V
Continuous Drain Current: 3.4 A at 25°C
Maximum Power Dissipation: 13 W at 25°C
Gate Threshold Voltage: 0.5 V to 0.8 V
Rds(on) Max: 63 mΩ at Vgs = 4.5 V
Package: Micro3™ (SOT-23)
RoHS Compliant, Halogen-Free
Junction Temperature Range: -55°C to +150°C
Maximum Heat Dissipation: 13 W at 25°C
Thermal Resistance Junction-to-Ambient: max 99°C/W
Gate-to-Source Voltage: ±12 V
Manufactured to IEC, RoHS standards, suitable for consumer electronics
Buy the Buy International HEXFET Power MOSFET Part Number IRLML6346TRPBF Online
Order the International HEXFET Power MOSFET IRLML6346TRPBF online for superior load switching, battery protection, and power management. Its compact Micro3™ package offers low Rds(on), fast switching speeds, and environmental compliance, ensuring high reliability across diverse applications. Perfect for DC switches, load control, and battery systems, this device features a drain-source voltage of 30 V and continuous drain current of 3.4 A at 25°C. Enjoy quick delivery, easy procurement, and guaranteed performance—enhance your electronics with this reliable, high-performing MOSFET today.
Get International HEXFET Power MOSFET IRLML6346TRPBF today—designed for reliable load switching and battery management in compact, high-efficiency applications.
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