The IGP30N65H5 is a fifth-generation high-speed IGBT featuring TrenchSTOP™ 5 technology, offering excellent efficiency in hard switching and resonant topologies. It supports maximum junction temperatures of 175°C and is qualified according to JEDEC standards. Designed for applications like solar converters, UPS, welding converters, and high-frequency switching power supplies, it provides a collector-emitter voltage of 650V, collector current up to 30A, and low gate charge. Its RoHS-compliant and lead-free construction ensures eco-friendly performance and reliable operation in demanding power control environments.
Discover the reliable performance of the Infineon IGP30N65H5 high-speed power transistor, engineered with advanced TrenchSTOP™ 5 technology. Ideal for solar converters, UPS, welding, and high-frequency power supplies, it offers a collector-emitter voltage of 650V, 30A continuous current, and low gate charge for enhanced efficiency. RoHS compliant and lead-free, this IGBT ensures eco-friendly operation and easy integration into your power control systems. Purchase online today for fast delivery and trusted quality, ensuring durable performance in demanding electrical environments.
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You can download the IGP30N65H5XKSA1 datasheet or visit the INFINEON website for support.
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