The IXTA06N120P is an N-channel enhancement mode power MOSFET designed for high-voltage and high-speed switching applications. Features include avalanche rating, low package inductance, and compatibility with international standard packages such as TO-263 and TO-220. It delivers high power density, easy mounting, and space savings, making it ideal for DC-DC converters, switch-mode power supplies, motor drives, and high-voltage pulsed power applications. Its robust construction ensures reliable performance in demanding electrical environments, with voltage ratings up to 1200 V and low on-resistance for efficient operation.
Reverse Diode: Forward Voltage Drop ~0.6 V at 6 A, Recovery Time: 37 ns
Switching Times: 19 to 37 ns (turn-on/off)
Maximum Transient Thermal Impedance: Data based on pulse testing
Buy the IXYS Series Power MOSFET: IXTA06N120P
Purchase the IXYS IXTA06N120P high-voltage power MOSFET online today to benefit from its reliable performance in demanding power switching applications. This high-quality component offers a voltage rating of 1200 V, low on-resistance, and excellent thermal stability, making it ideal for DC-DC converters, motor drives, and pulsed power circuits. Easy to mount with standard packages, it ensures space-efficient designs while delivering high efficiency and durability. Secure your supply chain by ordering this robust device now to enhance your electronic systems' performance.
Buy IXYS IXTA06N120P now and experience unmatched reliability and high-voltage switching performance for your power electronics projects.
Frequently Asked Questions
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