The RF LDMOS wideband integrated power amplifier operates from 2100 to 2900 MHz, delivering 3.2 W average power with high efficiency and wideband matching. Designed for cellular base stations, it features on-chip matching, temperature compensation, and is optimized for digital predistortion and Doherty applications. Suitable for high-power RF amplification, it offers reliable performance with low distortion and excellent linearity. Used in wireless infrastructure, it supports various modulation formats and includes detailed thermal and electrical specifications, making it ideal for demanding RF communication systems.
Maximum Voltage: Drain-Source 65 V, Gate-Source 10 V
Power Gain: 30.5 - 34.5 dB
Power Added Efficiency: 18 - 20%
Load Mismatch Tolerance: VSWR 10:1 at 36.3 W CW output power
Measurement conditions: Soldered to heatsink, fixture-based testing
Buy the Buy Freescale RF Amplifier Part Number A2I25D025NR1 Online
Purchase the RF Power Amplifier designed for extended frequency coverage from 2100 to 2900 MHz, providing 3.2 W average output power and excellent linearity. This high-efficiency RF power amplifier features integrated on-chip matching, temperature compensation, and is optimized for digital predistortion systems and Doherty architectures. Ideal for cellular base stations and wireless infrastructure, it ensures robust performance under demanding conditions. Easily order online to integrate this reliable component into your RF communication systems and boost signal strength and quality efficiently.
Buy Freescale A2I25D025NR1 now and experience unmatched reliability and high-performance RF amplification for cellular base stations.
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