These RF power LDMOS transistors operate over 1805 to 2700 MHz frequency range, delivering 1.5 W average power at 28 V, optimized for cellular base stations and digital predistortion systems. They feature greater negative gate-source voltage range for improved Class C operation, and are designed for Doherty applications, offering high efficiency, reliability, and suitability for high-frequency RF amplification in wireless infrastructure. The devices have RoHS compliance and come in plastic packages with gull wing or GULL WING mounting styles, supporting external thermal and electrical stability, ideal for modern digital communications and cellular systems.
NXP AFT20S015GNR1 RF Power Transistor Specifications:
Frequency Range: 1805 to 2700 MHz
Output Power: 1.5 W Avg. @ 28 V
Drain-Source Voltage: 0.5 to 65 V
Gate-Source Voltage: -6 to 10 V
Operating Voltage: 32 V
Junction Temperature Range: -40°C to +225°C
Thermal Resistance, Junction to Case: 42°C/W
Maximum Storage Temperature: -65 to +150°C
Case Operating Temperature Range: -40°C to +150°C
Handheld, Gull Wing and GULL WING Package Styles
RoHS Compliant
Designed for Digital Predistortion and Doherty Applications
RF Frequency Performance Up to 2700 MHz
ESD Protection: Class 1C (Human Body Model)
Moisture Sensitivity Level 3
Buy the Buy Freescale RF Power LDMOS Transistor Part Number AFT20S015GNR1 Online
Purchase the Freescale RF Power LDMOS Transistor AFT20S015GNR1 online today to leverage superior high-frequency performance for cellular base stations. These devices are engineered to deliver 1.5 W average power over 1805 to 2700 MHz, making them ideal for modern digital predistortion systems and Doherty applications. They feature a robust design with enhanced negative gate-source voltage range, RoHS compliance, and a package style suitable for easy integration into advanced RF amplification modules. Ensure your wireless infrastructure maintains high efficiency, reliability, and optimal performance by buying this trusted RF device today.
Buy Freescale AFT20S015GNR1 now and experience unmatched reliability and high efficiency in cellular and wireless RF amplification.
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