The BFU530XR is a high-speed NPN silicon RF transistor designed for low noise, medium power applications up to 2 GHz. It is housed in a compact plastic SOT143R package with reverse pinning. Ideal for broadband amplifiers, low noise amplifiers, and ISM band oscillators, it features a low noise figure of 0.65 dB at 900 MHz, maximum stable gain of 21 dB at 900 MHz, and transition frequency of 11 GHz. Its robust construction includes high breakdown voltages and thermal stability, making it suitable for demanding RF communication and instrumentation systems.
Upgrade your RF design with the NXP BFU530XR NPN silicon RF transistor, optimized for low noise, high gain, and high-speed applications up to 2 GHz. This compact SOT143R package ensures excellent thermal stability and robustness for broadband amplifiers, low noise amplifiers, and ISM band oscillators. Its low noise figure of 0.65 dB at 900 MHz and transition frequency of 11 GHz make it an ideal choice for demanding RF communication systems, delivering reliable performance and easy integration for advanced electronic applications.
You can click on the BUY or RFQ button to purchase BFU530XRR from an authorized NXP distributor.
You can download the BFU530XRR datasheet or visit the NXP website for support.
NXP