The RF Power LDMOS Transistor MRFE6VP61K25HR6 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wide frequency applications between 1.8 and 600 MHz. Suitable for industrial, broadcast, aerospace, and mobile radio transmissions, it offers excellent input/output design allowing operation at up to 50 Vpp and CW power output of 1250 W. Features include integrated ESD protection, series impedance parameters, and compatibility with linear and high-power RF systems, making it a reliable choice for demanding RF amplifier designs.
NXP MRFE6VP61K25HR6 RF Power Transistor Specifications:
Drain-Source Voltage: -0.5 to +133 Vdc
Gate-Source Voltage: -6.0 to +10 Vdc
Total Device Dissipation: 1333 W at 25°C
Storage Temperature Range: -65 to +150°C
Case Operating Temperature: up to 150°C
Junction Temperature: 225°C
Thermal Resistance, Junction to Case: 0.15°C/W
Input Return Loss: -14 to -10 dB at 230 MHz
Load Mismatch Tolerance: > 65:1 VSWR at 1500 Vpp peak
Power Output CW: 1250 W at 50 Vpp, frequency 1.8-600 MHz
Power Gain: 23-26 dB depending on frequency
Drain Efficiency: 74-80% depending on conditions
ESD Protection: Passes 3500 V (Human Body Model), 250 V (Machine Model), 4000 V (Charge Device Model)
Buy the Freescale Series High Rugged RF Amplifier: MRFE6VP61K25HR6
Enhance your RF systems with the high ruggedness, wide frequency range RF Power Transistor designed for industrial and broadcast applications. The MRFE6VP61K25HR6 offers CW power output of 1250 W at 50 Vpp, excellent for linear RF amplification, aerospace, and mobile radio systems. Featuring integrated ESD protection, series impedance characterization, and reliable performance at up to 150°C junction temperature, this transistor ensures durable operation under extreme conditions. Purchase online today to access advanced RF performance and robust design for your high-power RF projects.
Get Freescale MRFE6VP61K25HR6 today—built for high power, rugged performance, and reliable operation in demanding RF environments.
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