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NXP MRFE6VP61K25HR6 RF Power Transistor

The RF Power LDMOS Transistor MRFE6VP61K25HR6 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for wide frequency applications between 1.8 and 600 MHz. Suitable for industrial, broadcast, aerospace, and mobile radio transmissions, it offers excellent input/output design allowing operation at up to 50 Vpp and CW power output of 1250 W. Features include integrated ESD protection, series impedance parameters, and compatibility with linear and high-power RF systems, making it a reliable choice for demanding RF amplifier designs.

Authorized Distributors
Source:Newark
Part No:MRFE6VP61K25HR6
Stock:3
Inv Date:06-09-2026
Price: Unit price: $367.89
Buy/RFQ:
Source:DigiKey
Part No:MRFE6VP61K25HR6
Stock:445
Inv Date:06-09-2026
Price: Unit price: $412.14
Buy/RFQ:
Source:DigiKey
Part No:MRFE6VP61K25HR6
Stock:300
Inv Date:06-09-2026
Price: Unit price: $324.751
Buy/RFQ:
Part No:MRFE6VP61K25HR6
Stock:0
Inv Date:06-10-2026
Price: Unit price: $412.14
Buy/RFQ:

NXP MRFE6VP61K25HR6 RF Power Transistor Specifications:

  • Drain-Source Voltage: -0.5 to +133 Vdc
  • Gate-Source Voltage: -6.0 to +10 Vdc
  • Total Device Dissipation: 1333 W at 25°C
  • Storage Temperature Range: -65 to +150°C
  • Case Operating Temperature: up to 150°C
  • Junction Temperature: 225°C
  • Thermal Resistance, Junction to Case: 0.15°C/W
  • Input Return Loss: -14 to -10 dB at 230 MHz
  • Load Mismatch Tolerance: > 65:1 VSWR at 1500 Vpp peak
  • Power Output CW: 1250 W at 50 Vpp, frequency 1.8-600 MHz
  • Power Gain: 23-26 dB depending on frequency
  • Drain Efficiency: 74-80% depending on conditions
  • ESD Protection: Passes 3500 V (Human Body Model), 250 V (Machine Model), 4000 V (Charge Device Model)

Buy the Freescale Series High Rugged RF Amplifier: MRFE6VP61K25HR6

Enhance your RF systems with the high ruggedness, wide frequency range RF Power Transistor designed for industrial and broadcast applications. The MRFE6VP61K25HR6 offers CW power output of 1250 W at 50 Vpp, excellent for linear RF amplification, aerospace, and mobile radio systems. Featuring integrated ESD protection, series impedance characterization, and reliable performance at up to 150°C junction temperature, this transistor ensures durable operation under extreme conditions. Purchase online today to access advanced RF performance and robust design for your high-power RF projects.

Get Freescale MRFE6VP61K25HR6 today—built for high power, rugged performance, and reliable operation in demanding RF environments.

Frequently Asked Questions

Where can I buy NXP MRFE6VP61K25HR6?

You can click on the BUY or RFQ button to purchase MRFE6VP61K25HR6 from an authorized NXP distributor.

How do I troubleshoot issues or seek technical support for part MRFE6VP61K25HR6?

You can download the MRFE6VP61K25HR6 datasheet or visit the NXP website for support.

Who is the manufacturer of MRFE6VP61K25HR6?

NXP

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