The high-speed switching diode features a compact SOD-523 package, ideal for automotive and power switching applications. It is RoHS, halogen, and BFR free, with lead finish of 100% matte tin. The device supports a maximum reverse voltage of 100 V, forward current of 200 mA, and surge of 500 mA. Thermal dissipation reaches 200 mW with a junction-to-ambient resistance of 635 °C/W. Key electrical parameters include a reverse leakage current of 0.1 μA at 80 V, a diode capacitance of 30 pF, and a forward voltage of 1.2 V at 100 mA. Suitable for high-speed, low-loss switching in compact designs.
Purchase the ON Semiconductor high-speed switching diode 1SS400T1G online today for reliable performance in automotive and power switching applications. The device features a compact SOD-523 package, supporting a maximum reverse voltage of 100 V and a forward current of 200 mA. Its robust thermal characteristics include a total dissipation of 200 mW and junction-to-ambient resistance of 635 °C/W. Suitable for high-speed, low-loss switching in small, space-constrained designs, it is RoHS, halogen, and BFR free, with lead finish of 100% matte tin. Make your electronic projects or manufacturing processes more efficient and reliable with this qualified diode today.
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You can download the 1SS400T1G datasheet or visit the ONSEMI website for support.
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