This N-Channel UltraFET Power MOSFET offers an 80 V drain-to-source voltage, 75 A continuous drain current, and ultra-low on-resistance of 0.0102 V at 10V gate. Designed for high efficiency switching applications, it features a TO-220AB and TO-263AB packaging, peak pulse current capability, and robust thermal ratings. The device operates reliably across temperatures from -55°C to +175°C, with high power dissipation of 270 W and thermal resistance of 0.55°C/W junction to case. Ideal for power management, load switching, and motor control circuits, ensuring low conduction losses and fast switching times.
Maximum Soldering Temperature: 300°C for 10 seconds
Package Types: JEDEC TO-220AB and TO-263AB
Gate Threshold Voltage: 2-4 V
On Resistance: 0.0082-0.010 Ω at Vgs = 10 V
Input Capacitance: 3750 pF
Output Capacitance: 1100 pF
Reverse Transfer Capacitance: 350 pF
Reverse Recovery Time: 100 ns
Gate Charge at 10 V: 105-125 nC
Buy the Buy FAIRCHILD HUF75545S3ST Part Number HUF75545S3ST Online
Experience rapid and reliable online ordering of the Power MOSFET with part number HUF75545S3ST from FAIRCHILD. This high-performance N-Channel device offers 80V and 75A power handling, with ultra-low Rds(on) for efficient switching. Perfect for power management, motor control, and load switching, it features excellent thermal performance and robust construction suitable for demanding environments. Ordering online ensures quick delivery, technical support, and genuine FAIRCHILD quality, making it the ideal choice for professional engineers and electronic designers seeking top-tier semiconductor components.
Buy FAIRCHILD HUF75545S3ST now and experience unmatched reliability and performance in high-efficiency switching applications.
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