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ONSEMI 2N5190G NPN Silicon Power Transistor
The ONSEMI 2N5190G is a silicon NPN power transistor specifically engineered for use in power amplifier and switching circuit applications. Its design incorporates excellent safe area limits, making it a reliable choice for demanding power management tasks. Complementary to the PNP transistors 2N5194 and 2N5195, the 2N5190G provides a balanced solution for various circuit designs. It is Pb-Free and RoHS Compliant, aligning with environmental standards and reducing hazardous substance content. The device's thermal characteristics and electrical specifications ensure stable and efficient operation across a wide range of conditions.
ONSEMI 2N5190G NPN Silicon Power Transistor Specifications:
- VCEO: 40 Vdc
- VCBO: 40 Vdc
- VEBO: 5.0 Vdc
- IC: 4.0 Adc
- IB: 1.0 Adc
- PD: 40 W
- TJ: -65 to +150 °C
- HBM: 3B V
- MM: C V
- Epoxy Meets UL 94 V−0: 0.125 in.
- Thermal Resistance, Junction−to−Case: 3.12 °C/W
- DC Current Gain (hFE): 25 to 100
- Collector−Emitter Saturation Voltage: 0.6 Vdc
- Base−Emitter On Voltage: 1.2 Vdc
- Current−Gain − Bandwidth Product: 2.0 MHz
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Frequently Asked Questions
Where can I buy ONSEMI 2N5190G?
You can click on the BUY or RFQ button to purchase 2N5190G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part 2N5190G?
You can download the 2N5190G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of 2N5190G?
ONSEMI