This N-Channel enhancement mode power MOSFET offers a maximum drain-source voltage of 200 V and a drain current of 9.0 A. Built using Fairchild's proprietary planar and DMOS technology, it features low on-resistance (280 mΩ @ Vgs=10V), low gate charge (16 nC), and excellent switching performance. Suitable for switched-mode power supplies, PFC, and electronic lamp ballasts, it is 100% avalanche tested, ensuring high avalanche energy strength and reliability in demanding power applications.
Operating and Storage Temperature Range: -55°C to +150°C
Thermal Resistance Junction to Case: 2.27°C/W
Thermal Resistance Junction to Ambient: 50°C/W
Package: D-PAK
Package Dimensions: Length 11.25 mm, Width 6.50 mm, Height 2.85 mm
Buy the Buy Fairchild FQD12N20L Part Number FQD12N20LTM Online
Purchase the Fairchild FQD12N20L power MOSFET online for reliable high-voltage switching with low on-resistance and fast switching capabilities. Perfect for power supplies, active PFC circuits, and electronic ballasts, this device provides excellent avalanche energy handling and thermal performance. Its robust construction and avalanche-tested design ensure durability and efficiency in demanding applications, making it an ideal choice for engineers and technicians seeking quality power components. Buy now to ensure optimal performance and long-lasting operation in your power management systems.
Get Fairchild FQD12N20L today—built for precision, low on-resistance, and reliable power switching in demanding electronic applications.
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