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ONSEMI 2N5191G NPN Silicon Power Transistor
The ONSEMI 2N5191G is a silicon NPN power transistor suitable for a wide range of power amplifier and switching circuit applications. Its robust design provides excellent safe area limits, making it a reliable choice for demanding industrial environments. Complementary to the PNP transistors 2N5194 and 2N5195, the 2N5191G offers versatility in circuit design. It is Pb-Free and RoHS Compliant, aligning with environmental standards. The device's thermal characteristics and electrical specifications ensure stable performance across a wide operating temperature range, contributing to the overall reliability of the system.
ONSEMI 2N5191G NPN Silicon Power Transistor Specifications:
- Collector−Emitter Voltage: 60 Vdc
- Collector−Base Voltage: 60 Vdc
- Emitter−Base Voltage: 5.0 Vdc
- Collector Current: 4.0 Adc
- Base Current: 1.0 Adc
- Total Device Dissipation: 320 W
- Operating and Storage Junction Temperature Range: –65 to +150 °C
- ESD − Human Body Model: 3B V
- ESD − Machine Model: C V
- Thermal Resistance, Junction−to−Case: 3.12 °C/W
- DC Current Gain (IC= 1.5 Adc, VCE= 2.0 Vdc): 20 to 100
- Collector−Emitter Saturation Voltage (IC= 1.5 Adc, IB= 0.15 Adc): 0.6 Vdc
- Base−Emitter On Voltage (IC= 1.5 Adc, VCE= 2.0 Vdc): 1.2 Vdc
- Current−Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 10 Vdc, f = 1.0 MHz): 2.0 MHz
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Frequently Asked Questions
Where can I buy ONSEMI 2N5191G?
You can click on the BUY or RFQ button to purchase 2N5191G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part 2N5191G?
You can download the 2N5191G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of 2N5191G?
ONSEMI