The 2N7000D26Z is a 60V N-channel enhancement mode MOSFET produced with high-density DMOS technology. Designed for low-voltage, low-current switching applications, it handles continuous currents up to 400mA and pulsed currents up to 2A. Its features include low on-resistance for fast switching, high saturation current, and a drain-gate voltage of 60V. Suitable for small servo motor control, power MOSFET gate drivers, and switching circuits, it has a thermal resistance of 312.5°C/W from junction to ambient, ensuring reliable operation in various environments.
Thermal Resistance: 312.5°C/W from junction to ambient
Drain-Gate Voltage: 60 V
Gate-Source Voltage: ±20 V
Technology: High-density DMOS
Package: TO-92
Designed for low voltage, low current switching applications
Suitable for servo motor control, power MOSFET gate drivers, and switching applications
Buy the Fairchild Series N-Channel Enhancement: 2N7000D26Z
Purchase the Fairchild N-channel MOSFET in the 2N7000D26Z series online today. This high-performance device is ideal for low-voltage switching applications, offering a drain-gate voltage of 60V, low on-resistance, and pulsed currents up to 2A. Its design ensures fast, reliable operation for small servo motors, power drivers, and various switching circuits. Secure quick delivery and expert support as you enhance your electronic projects with this robust, industry-standard MOSFET, suitable for demanding low-current, low-voltage applications.
Order your Fairchild Series N-Channel Enhancement 2N7000D26Z today and give your projects the dependable switching performance they deserve.
Frequently Asked Questions
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