The BC847BWT1G is an NPN general-purpose bipolar junction transistor suitable for various amplification applications. It features a surface-mount package ideal for low-power and compact electronic designs. This transistor is commonly used in industrial and power management circuits, offering reliable performance with a maximum collector-emitter voltage of 45 V and a maximum collector current of 100 mA. It is qualified for automotive and industrial applications, being RoHS compliant and Pb-Free, making it a versatile choice for a wide range of electronic projects and manufacturing needs.
ONSEMI BC847BWT1G General purpose transistor Specifications:
Package: SC-70/SOT-323
Maximum Collector-Emitter Voltage: 45 V
Maximum Collector-Base Voltage: 50 V
Maximum Emitter-Base Voltage: 6.0 V
Collector Current: 100 mA
Thermal Resistance, Junction-to-Ambient: 620 °C/W
Total Device Dissipation: 200 mW at 25°C
Storage Temperature Range: -55°C to +150°C
Maximum Junction Temperature: +150°C
RoHS Compliant, Pb-Free, Halogen Free
Qualified for Automotive and Industrial Applications (AEC-Q101)
Surface Mount Design, Suitable for Low Power Surface Mount Applications
Buy the Buy ON Semiconductor BC847BWT1G Part Number BC847BWT1G Online
Purchase the ON Semiconductor BC847BWT1G transistor online today to enhance your electronic designs with a reliable, high-quality surface-mount NPN device. Perfect for low-power amplification, industrial equipment, and power management circuits, this RoHS compliant transistor offers a maximum collector-emitter voltage of 45 V and a current of 100 mA. Its compact SC-70/SOT-323 package allows for versatile mounting options. Get fast delivery and competitive pricing while ensuring your projects meet industry standards for quality and performance.
Order your ON Semiconductor Series BC847BWT1G surface-mount transistor today and ensure reliable, compact performance for your industrial or electronic projects.
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