The BAS16WT1G is a silicon switching diode designed for high-speed switching applications in electronic circuits. It features a low forward voltage, fast reverse recovery time of 6.0 ns, and a maximum reverse voltage of 100 V. The device is Pb-Free, halogen-free, and RoHS compliant, making it suitable for automotive and industrial applications. With a maximum total power dissipation of 200 mW at 25°C and thermal resistance of 625°C/W junction-to-ambient, it ensures reliable performance in compact designs. Its robust construction supports operation from -55°C to +150°C.
Operating and Storage Junction Temperature Range: -55°C to +150°C
Reverse Recovery Time: 6.0 ns
Capacitance: 2.0 pF
Marking: AG M, SC-70 case style
Package: SC-70, Tape & Reel (3000 units)
Buy the ON Semiconductor Series BAS16 WT1G Silicon Switching Diode: SBAS16WT1G
Purchase the ON Semiconductor BAS16WT1G silicon switching diode online today and ensure your electronic projects benefit from high-speed, reliable performance. With a low forward voltage, fast recovery time of 6 ns, and a maximum reverse voltage of 100 V, this diode is perfect for automotive, industrial, and high-speed switching applications. Its compact SC-70 package offers easy integration for space-constrained designs. Trust in ON Semiconductor for quality components delivered directly to your door, supporting your engineering needs with precision and dependability.
Buy ON Semiconductor BAS16WT1G now and experience unmatched reliability and high-speed switching performance in your electronic circuits.
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