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ONSEMI BC847CLT1G Bipolar Junction Transistor

The BC847CLT1G is a high-performance NPN silicon bipolar junction transistor designed for general-purpose switching and amplification applications. Featuring a maximum collector-emitter voltage of 45 V and a collector current of 100 mA, it is fully compliant with RoHS standards and boasts a moisture sensitivity level of 1. Its low capacitance and high current gain make it suitable for low-noise and high-speed electronic circuits. Manufactured using lead-free, halogen-free materials, this transistor is ideal for automotive and industrial applications requiring reliable operation and environmental safety.

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Source:Newark
Part No:BC847CLT1G
Stock:11412
Inv Date:06-10-2026
Price: Unit price: $0.124
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Part No:BC847CLT1G
Stock:2356
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Price: Unit price: $0.12
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Part No:BC847CLT1G
Stock:31651
Inv Date:06-11-2026
Price: Unit price: $0.23
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Part No:BC847CLT1G
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Inv Date:06-10-2026
Price: Unit price: $1.41
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Part No:BC847CLT1G
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Inv Date:06-10-2026
Price: Unit price: $0.0112
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Part No:BC847CLT1G
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Part No:BC847CLT1G
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Price: Unit price: $0.0137
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Source:Arrow EU
Part No:BC847CLT1G
Stock:2772000
Inv Date:06-11-2026
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Part No:BC847CLT1G
Stock:4187
Inv Date:06-11-2026
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ONSEMI BC847CLT1G Bipolar Junction Transistor Specifications:

  • Collector-Emitter Voltage: 45 V
  • Collector-Base Voltage: 50 V
  • Emitter-Base Voltage: 6.0 V
  • Collector Current: 100 mA
  • Total Device Dissipation: 225 mW at 25°C, derates at 1.8 mW/°C
  • Thermal Resistance, Junction-to-Ambient: 556 °C/W
  • Junction temperature range: -55°C to +125°C
  • Package: SOT-23, Dimensions: 0.031 inches pin pitch
  • Features: Moisture Sensitivity Level 1, ESD >4000 V, Pb-Free, RoHS compliant
  • Case Material: 99.5% alumina, high thermal conductivity
  • Maximum operating temperature: +150°C
  • DC current gain (hFE): 90-520 depending on specific model
  • Capacitance between collector and base: up to 45 pF
  • Temperature coefficient of base-emitter voltage: -2.0 mV/°C at 25°C

Buy the Buy ON Semiconductor BC846ALT1G Transistor Part Number BC846ALT1G Online

Secure your ON Semiconductor BC846ALT1G transistor online now to enhance your electronic projects. Designed for reliable performance, this high-speed NPN BJT offers a maximum collector-emitter voltage of 45 V and a collector current of 100 mA. Perfect for a broad range of switching and amplification tasks, it features low capacitance, high current gain, and RoHS compliance, making it suitable for industrial, automotive, and consumer electronics. Purchase today for prompt delivery and quality assurance.

Order your ON Semiconductor BC846ALT1G high-speed transistor today and equip your circuits with reliable switching and amplification performance.

Frequently Asked Questions

Where can I buy ONSEMI BC847CLT1G?

You can click on the BUY or RFQ button to purchase BC847CLT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part BC847CLT1G?

You can download the BC847CLT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of BC847CLT1G?

ONSEMI

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