The product encompasses dual NPN bias transistors designed for circuit simplification and space reduction. These transistors feature monolithic bias networks with integrated resistors, eliminating external components. Suitable for automotive and industrial applications, they offer high collector-emitter voltage ratings up to 50V, low saturation voltage of 0.25V, and high DC current gain of up to 60. Packaging options include SOT-363, SOT-563, and SOT-963, with thermal dissipation ranging from 187mW to 385mW depending on model. Operating temperature spans from -55°C to +150°C, ensuring reliability across demanding environments.
Total Device Dissipation: 187-385 mW depending on model
Thermal Resistance, Junction to Ambient: 325-670 °C/W
Operating Temperature Range: -55°C to +150°C
Collector-Base Breakdown Voltage: 50 V
Collector-Emitter Breakdown Voltage: 50 V
DC Current Gain (hFE): 35-60
Output Capacitance: around 2-3 pF
Input Forward Voltage: approximately 0.2V
Input Reverse Voltage: 10 V
Resistor Ratios: 0.8-1.2
Power Dissipation: 187-385 mW
Maximum Lead Thickness: includes lead and finish, over 0.20 mm tolerance
Buy the ON Semiconductor Series Dual Bias Transistors: NSVMUN5211DW1T3G
Purchase ON Semiconductor dual NPN bias transistors online today. These high-performance automotive-grade transistors feature integrated resistor networks for simplified design, high collector-emitter voltage ratings up to 50V, and a high gain of up to 60. Packaged in compact SOT-363, SOT-563, or SOT-963 enclosures, they ensure reliable operation from -55°C to +150°C. Ideal for industrial, automotive, and advanced electronic applications, these transistors offer excellent thermal performance and minimal component count for efficient circuit design.
Get ON Semiconductor NSVMUN5211DW1T3G today—built for precision, high voltage performance, and long-lasting durability in demanding environments.
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