The FCD380N60E is a high-voltage N-Channel SuperFET II MOSFET with a voltage rating of 600V and a continuous drain current of 10.2A. Designed for efficient power switching, it features a low on-resistance of 320 mΩ, ultra-low gate charge of 34 nC, and excellent avalanche energy performance. Its high-temperature operation up to +150°C, small package size, and rapid switching capabilities make it ideal for high-speed power applications, inverters, and power supplies, providing outstanding switching efficiency, thermal stability, and reliable performance in demanding environments.
Package: DPAK (TO-252), Soldering Temp: 300°C for 5 sec
Buy the Buy ON Semiconductor FCD380N60E Part Number FCD380N60E Online
Discover the excellent performance of the ON Semiconductor FCD380N60E high-voltage N-Channel MOSFET. With 600V voltage rating, low Rds(on), and ultra-low gate charge, it provides reliable, efficient power switching for inverter circuits, power supplies, and high-speed switching applications. Its compact DPAK package ensures easy integration into demanding designs, offering thermal stability and outstanding avalanche energy capability. Get your FCD380N60E today online and upgrade your power management systems with this high-performance, durable MOSFET designed for industrial and electronics applications.
Order your ON Semiconductor FCD380N60E high-voltage MOSFET today and enhance your power switching efficiency in high-temperature environments.
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