The FDB14N30 UniFET™ MOSFET is a high-voltage N-channel device designed for switching power converters such as PFC, TV power supplies, and electronic lamp ballasts. It features a drain-source voltage of 300 V and a continuous drain current of 14 A, with low gate charge and capacitance for high efficiency. Built using planar stripe and DMOS technology, it offers improved dv/dt capability and avalanche energy strength. This MOSFET is ideal for applications requiring reliable performance, high avalanche energy, and efficient switching in industrial power systems.
Purchase the Fairchild FDB14N30 MOSFET online today for superior performance in industrial power systems. This high-voltage N-channel MOSFET offers 300 V drain-source voltage and 14 A continuous drain current, making it ideal for switching power converters and power supplies. Built with advanced DMOS technology, it provides low gate charge and capacitance, ensuring efficient switching and high avalanche energy strength. Reliable and tested for avalanche, it is perfect for industrial applications demanding durability, efficiency, and high-temperature operation in power conversion and control systems.
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You can download the FDB14N30TM datasheet or visit the ONSEMI website for support.
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