This N-Channel MOSFET features advanced Shielded Gate technology for superior switching performance with low on resistance. Designed for high-current applications like DC-DC converters, motor drives, and solar systems, it offers a maximum drain-source voltage of 80V and continuous drain current of 84A. Its Pb-Free, RoHS-compliant package ensures environmentally friendly use. With robust thermal and electrical features, it provides reliable operation in demanding power management and switching applications, making it ideal for high-efficiency power circuitry and automation setups.
ONSEMI FDMS007N08LC High-Current Power MOSFET Specifications:
Drain to Source Voltage: 80 V
Gate to Source Voltage: 420 V
Continuous Drain Current at 25°C: 84 A
Pulsed Drain Current: 345 A
Power Dissipation at 25°C: 92.6 W
Operating Junction Temperature Range: -55 to +150 °C
Thermal Resistance Junction to Case: 1.35 °C/W
Thermal Resistance Junction to Ambient: 50 °C/W
Input Capacitance: 3100 pF
Output Capacitance: 760 pF
Gate Charge at 40V: 46 nC
Reverse Recovery Time: 18-32 ns
Body Diode Forward Voltage: 0.8-1.3 V
Buy the Buy ON Semiconductor FDMS007NO8LC Part Number FDMS007NO8LC Online
Purchase the ON Semiconductor FDMS007NO8LC today for reliable high-current switching in power management systems. Designed with advanced Shielded Gate technology, it offers low on resistance and excellent thermal stability. Perfect for DC-DC converters, motor controllers, and solar power setups, this Pb-Free, RoHS-compliant MOSFET ensures environmentally friendly and efficient operation. Its robust package and thermal characteristics make it a durable choice for demanding industrial, automotive, and automation applications—enhancing performance and reliability in your power circuitry needs.
Get ON Semiconductor FDMS007NO8LC today—built for high-current switching, superior thermal management, and long-lasting durability in power applications.
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