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ONSEMI FDT86113LZ Power MOSFET

The FDT86113LZ is an N-channel logic level MOSFET developed using PowerTrench® technology, offering low on-resistance and superior switching. It features an integrated G-S Zener diode for enhanced ESD protection and can handle high power and current in a surface-mount package. Suitable for DC-DC switching applications, it is rigorously tested and complies with RoHS standards, with an ESD protection level exceeding 3 kV. Ideal for high-performance power management in compact, efficient designs, its specifications include maximum drain-to-source voltage of 100 V and continuous drain current of 3.3 A, making it a reliable choice for modern electronic systems.

Authorized Distributors
Source:Newark
Part No:FDT86113LZ
Stock:3
Inv Date:06-10-2026
Price: Unit price: $0.118
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Source:DigiKey
Part No:FDT86113LZ
Stock:56248
Inv Date:06-10-2026
Price: Unit price: $1.64
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Part No:FDT86113LZ
Stock:25222
Inv Date:06-11-2026
Price: Unit price: $1.64
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Part No:FDT86113LZ
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.83
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Part No:FDT86113LZ
Stock:2945
Inv Date:06-10-2026
Price: Unit price: $0.865
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Part No:FDT86113LZ
Stock:2945
Inv Date:06-10-2026
Price: Unit price: $0.865
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Part No:FDT86113LZ
Stock:12000
Inv Date:06-10-2026
Price: Unit price: $0.54
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Part No:FDT86113LZ
Stock:277
Inv Date:06-11-2026
Price: N/A
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ONSEMI FDT86113LZ Power MOSFET Specifications:

  • Drain-to-Source Voltage: 100 V
  • Gate-to-Source Voltage: ±20 V
  • Continuous Drain Current: 3.3 A
  • Pulsed Drain Current: 12 A
  • Single Pulse Avalanche Energy: 9 mJ
  • Power Dissipation at 25°C: 22 W
  • Junction Operating Temp Range: -55°C to +150°C
  • Thermal Resistance Junction to Case: 12°C/W
  • Thermal Resistance Junction to Ambient: 55°C/W
  • Gate Threshold Voltage: 1.0–2.5 V
  • Gate Charge: 23–68 nC
  • Input Capacitance: 234–315 pF
  • Output Capacitance: 46–65 pF
  • Total Gate Charge: 44–68 nC
  • Body Diode Forward Voltage: 0.86 V
  • Reverse Recovery Time: 31–49 ns
  • Maximum Continuous Drain Current vs Case Temp: data available up to 150°C
  • ESD Protection Level: > 3 kV HBM
  • Package: SOT-223
  • Device Marking: FDT86113LZ
  • Operating and Storage Temperature Range: -55°C to +150°C

Buy the Fairchild FDT86113LZ – Reliable PowerTrench MOSFET for Industrial Applications

Purchase the Fairchild FDT86113LZ MOSFET online today to ensure optimal performance for your power management and switching needs. Engineered with PowerTrench® technology, this N-channel device provides low Rds(on), high current capacity, and robust ESD protection exceeding 3 kV. Its compact SOT-223 package makes it ideal for space-constrained designs in industrial electronics and power supply circuits. With rigorous testing and RoHS compliance, ordering online guarantees authentic, high-quality components delivered promptly, helping you streamline your assembly process and improve device reliability in demanding applications.

Order your Fairchild FDT86113LZ series high-performance MOSFET today and enhance your power switching projects with reliable, low-resistance components.

Frequently Asked Questions

Where can I buy ONSEMI FDT86113LZ?

You can click on the BUY or RFQ button to purchase FDT86113LZ from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FDT86113LZ?

You can download the FDT86113LZ datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FDT86113LZ?

ONSEMI

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