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ONSEMI NSVMMBTH10LT1G High-Frequency NPN Transistor

The NSVMMBTH10LT1G is a high-quality NPN silicon transistor designed for automotive and general electronic switching applications. This Pb-Free, halogen-free, and RoHS-compliant device features collector-emitter voltage of 25 V, collector-base voltage of 30 V, and emitter-base voltage of 3.0 V. It offers a DC current gain of up to 120, low saturation voltage, and excellent high-frequency characteristics with a bandwidth of 650-800 MHz. Encased in a compact SOT-23 package, it ensures reliable performance in demanding environments with thermal resistances of 556 °C/W junction to ambient and utilizes a max power dissipation of 225 mW on FR-5 boards at 25°C.

Authorized Distributors
Source:DigiKey
Part No:NSVMMBTH10LT1G
Stock:11703
Inv Date:06-10-2026
Price: Unit price: $0.26
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Part No:NSVMMBTH10LT1G
Stock:2743
Inv Date:06-11-2026
Price: Unit price: $0.26
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Part No:NSVMMBTH10LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.39
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Part No:NSVMMBTH10LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.1216
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Part No:NSVMMBTH10LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.1216
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Part No:NSVMMBTH10LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.136
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ONSEMI NSVMMBTH10LT1G High-Frequency NPN Transistor Specifications:

  • Collector-Emitter Voltage: 25 V
  • Collector-Base Voltage: 30 V
  • Emitter-Base Voltage: 3.0 V
  • Total Device Dissipation: 225 mW at 25°C (FR-5), 300 mW with alumina substrate
  • Thermal Resistance Junction to Ambient: 556 °C/W (FR-5), 7 °C/W (alumina)
  • DC Current Gain: 60 to 120
  • Collector-Emitter Saturation Voltage: VCE(sat) (typ) V
  • Base-Emitter Voltage: VBE (typ) V
  • Frequency Bandwidth: 650-800 MHz
  • Package: SOT-23 (TO-236), Case 318-A
  • Maximum Operating Temperature: -55°C to +150°C
  • RoHS, Pb-Free, Halogen Free, BFR Free Compliance

Buy the Buy Semiconductor Transistor Part Number NSVMMBTH10LT1G Online

Enhance your electronic projects with the NSVMMBTH10LT1G high-frequency NPN silicon transistor. This reliable, RoHS-compliant device features a maximum collector-emitter voltage of 25 V and a DC gain up to 120, making it suitable for automotive and switching applications. Encased in a small SOT-23 package, it offers excellent thermal performance with low power dissipation, ensuring dependable operation in demanding environments. Perfect for designers seeking compact, high-performance transistors for electronics, automation, or control circuits, available for quick online purchase with fast delivery.

Get NSVMMBTH10LT1G today—built for automotive and high-frequency switching reliability with RoHS compliance and a compact SOT-23 package.

Frequently Asked Questions

Where can I buy ONSEMI NSVMMBTH10LT1G?

You can click on the BUY or RFQ button to purchase NSVMMBTH10LT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part NSVMMBTH10LT1G?

You can download the NSVMMBTH10LT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of NSVMMBTH10LT1G?

ONSEMI

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