The NSVMMBTH10LT1G is a high-quality NPN silicon transistor designed for automotive and general electronic switching applications. This Pb-Free, halogen-free, and RoHS-compliant device features collector-emitter voltage of 25 V, collector-base voltage of 30 V, and emitter-base voltage of 3.0 V. It offers a DC current gain of up to 120, low saturation voltage, and excellent high-frequency characteristics with a bandwidth of 650-800 MHz. Encased in a compact SOT-23 package, it ensures reliable performance in demanding environments with thermal resistances of 556 °C/W junction to ambient and utilizes a max power dissipation of 225 mW on FR-5 boards at 25°C.
Collector-Emitter Saturation Voltage: VCE(sat) (typ) V
Base-Emitter Voltage: VBE (typ) V
Frequency Bandwidth: 650-800 MHz
Package: SOT-23 (TO-236), Case 318-A
Maximum Operating Temperature: -55°C to +150°C
RoHS, Pb-Free, Halogen Free, BFR Free Compliance
Buy the Buy Semiconductor Transistor Part Number NSVMMBTH10LT1G Online
Enhance your electronic projects with the NSVMMBTH10LT1G high-frequency NPN silicon transistor. This reliable, RoHS-compliant device features a maximum collector-emitter voltage of 25 V and a DC gain up to 120, making it suitable for automotive and switching applications. Encased in a small SOT-23 package, it offers excellent thermal performance with low power dissipation, ensuring dependable operation in demanding environments. Perfect for designers seeking compact, high-performance transistors for electronics, automation, or control circuits, available for quick online purchase with fast delivery.
Get NSVMMBTH10LT1G today—built for automotive and high-frequency switching reliability with RoHS compliance and a compact SOT-23 package.
Frequently Asked Questions
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